- 供应商设备包 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
19 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,861
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250mA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,273
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,062
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,856
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,876
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,141
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,465
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,973
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
647
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,839
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,547
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,166
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,950
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,528
有现货
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,406
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,946
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,575
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,975
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,109
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V |