- 25°C时的电流-连续漏极（Id） :
-
- 10A (Ta), 55A (Tc) (2)
- 11A (Ta), 58A (Tc) (1)
- 11A (Ta), 63A (Tc) (1)
- 12A (Tc) (2)
- 13A (Ta), 71A (Tc) (1)
- 14A (Ta), 75A (Tc) (2)
- 16A (Ta), 89A (Tc) (2)
- 16A (Tc) (1)
- 22A (Ta), 100A (Tc) (1)
- 24A (Ta), 100A (Tc) (1)
- 56A (Tc) (3)
- 61A (Tc) (1)
- 73A (Tc) (1)
- 75A (Tc) (1)
- 79A (Tc) (1)
- 7A (Ta) (1)
- 80A (Tc) (1)
- 9.4A (Tc) (1)
- 9.6A (Tc) (1)
- 9A (Ta) (1)
- Rds开启（最大）@Id，Vgs :
-
- 12.4 mOhm @ 37A, 10V (1)
- 13.5 mOhm @ 35A, 10V (1)
- 13.9 mOhm @ 37A, 10V (1)
- 13.9 mOhm @ 38A, 10V (1)
- 14 mOhm @ 44A, 10V (1)
- 14.9 mOhm @ 33A, 10V (2)
- 22 mOhm @ 4.5A, 10V (1)
- 220 mOhm @ 8A, 10V (1)
- 3.5 mOhm @ 50A, 10V (1)
- 30 mOhm @ 4.8A, 10V (1)
- 320 mOhm @ 6A, 10V (2)
- 33 mOhm @ 4.7A, 10V (1)
- 4.3 mOhm @ 50A, 10V (1)
- 48 mOhm @ 3.5A, 10V (1)
- 6.7 mOhm @ 50A, 10V (2)
- 8.4 mOhm @ 47A, 10V (2)
- 8.5 mOhm @ 45A, 10V (2)
- 8.5 mOhm @ 51A, 10V (1)
- 9 mOhm @ 46A, 10V (2)
- 9.6 mOhm @ 43A, 10V (1)
- 输入电容（Ciss）（最大）@Vds :
-
- 1300pF @ 50V (1)
- 2290pF @ 50V (2)
- 2460pF @ 25V (1)
- 2474pF @ 25V (1)
- 2490pF @ 25V (2)
- 2570pF @ 25V (2)
- 2810pF @ 25V (1)
- 3001pF @ 25V (1)
- 3031pF @ 50V (1)
- 3070pF @ 50V (2)
- 3110pF @ 25V (1)
- 3120pF @ 25V (1)
- 3152pF @ 25V (1)
- 3180pF @ 50V (1)
- 3240pF @ 25V (1)
- 3550pF @ 50V (1)
- 470pF @ 10V (1)
- 710pF @ 30V (1)
- 816pF @ 50V (2)
- 880pF @ 50V (1)
- 920pF @ 40V (1)
- 驱动电压（最大Rds接通，最小Rds接通） :
26 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,333
有现货
|
Infineon Technologies | MOSFET N CH 100V 11A PQFN5X6 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 11A (Ta), 58A (Tc) | 13.5 mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,786
有现货
|
Infineon Technologies | MOSFET N-CH 40V 22A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 105W (Tc) | N-Channel | - | 40V | 22A (Ta), 100A (Tc) | 4.3 mOhm @ 50A, 10V | 4V @ 100µA | 65nC @ 10V | 2460pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,453
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10A 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 10A (Ta), 55A (Tc) | 14.9 mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | 2570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,285
有现货
|
Infineon Technologies | MOSFET N-CH 75V 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 105W (Tc) | N-Channel | - | 75V | 13A (Ta), 71A (Tc) | 9.6 mOhm @ 43A, 10V | 4V @ 100µA | 59nC @ 10V | 2474pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,296
有现货
|
Infineon Technologies | MOSFET N-CH 60V 16A 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 100W (Tc) | N-Channel | - | 60V | 16A (Ta), 89A (Tc) | 6.7 mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | 2490pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,289
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 114W (Tc) | N-Channel | - | 100V | 11A (Ta), 63A (Tc) | 12.4 mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | 3152pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
709
有现货
|
Infineon Technologies | MOSFET N-CH 100V 61A D2PAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 100V | 61A (Tc) | 13.9 mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | 3180pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
632
有现货
|
Infineon Technologies | MOSFET N-CH 75V 14A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 75V | 14A (Ta), 75A (Tc) | 8.5 mOhm @ 45A, 10V | 4V @ 100µA | 72nC @ 10V | 3110pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,176
有现货
|
Infineon Technologies | MOSFET N-CH 60V 16A 8-PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 100W (Tc) | N-Channel | - | 60V | 16A (Ta), 89A (Tc) | 6.7 mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | 2490pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,164
有现货
|
Infineon Technologies | MOSFET N-CH 60V 79A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,586
有现货
|
STMicroelectronics | MOSFET N-CH 500V 12A DPAK | MDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 90W (Tc) | N-Channel | - | 500V | 12A (Tc) | 320 mOhm @ 6A, 10V | 4V @ 100µA | 27nC @ 10V | 816pF @ 50V | 10V | ±25V | ||
|
|
获得报价 |
2,395
有现货
|
Infineon Technologies | MOSFET N-CH 60V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
1,195
有现货
|
Infineon Technologies | MOSFET N-CH 100V 73A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,538
有现货
|
Infineon Technologies | MOSFET N-CH 40V 24A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 114W (Tc) | N-Channel | - | 40V | 24A (Ta), 100A (Tc) | 3.5 mOhm @ 50A, 10V | 4V @ 100µA | 80nC @ 10V | 3120pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,237
有现货
|
Infineon Technologies | MOSFET N-CH 75V 75A 8PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 4.4W (Ta), 125W (Tc) | N-Channel | - | 75V | 14A (Ta), 75A (Tc) | 8.5 mOhm @ 45A, 10V | 4V @ 100µA | 77nC @ 10V | 3001pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,438
有现货
|
Infineon Technologies | MOSFET N-CH 75V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 75V | 56A (Tc) | 9 mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
2,344
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10A 8-PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 100V | 10A (Ta), 55A (Tc) | 14.9 mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | 2570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,469
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | ||
|
|
获得报价 |
2,125
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 9.6A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 80V | 9.6A (Tc) | 30 mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | 920pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
2,638
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 9A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 60V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | 6.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,062
有现货
|
Infineon Technologies | MOSFET N-CH 75V 80A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 75V | 80A (Tc) | 9 mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
3,606
有现货
|
Infineon Technologies | MOSFET N-CH 60V 75A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 60V | 75A (Tc) | 8.5 mOhm @ 51A, 10V | 4V @ 100µA | 86nC @ 10V | 2810pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,108
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,896
有现货
|
STMicroelectronics | MOSFET N-CH 600V 16A D2PAK | MDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 125W (Tc) | N-Channel | - | 600V | 16A (Tc) | 220 mOhm @ 8A, 10V | 4V @ 100µA | 44nC @ 10V | 1300pF @ 50V | 10V | ±30V | ||
|
|
获得报价 |
1,904
有现货
|
STMicroelectronics | MOSFET N-CH 500V 12A D2PAK | MDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 90W (Tc) | N-Channel | - | 500V | 12A (Tc) | 320 mOhm @ 6A, 10V | 4V @ 100µA | 27nC @ 10V | 816pF @ 50V | 10V | ±25V | ||
|
|
|
获得报价 |
3,337
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V |
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