- FET型 :
- Rds开启（最大）@Id，Vgs :
- 驱动电压（最大Rds接通，最小Rds接通） :
15 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
1,016
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 68W (Tc) | N-Channel | - | 150V | 21A (Tc) | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | 8V, 10V | ±20V | ||
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获得报价 |
1,103
有现货
|
NXP USA Inc. | MOSFET N-CH 30V QFN3333 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 41W (Tc) | N-Channel | - | 30V | 21A (Tc) | 13 mOhm @ 5A, 10V | 2.15V @ 1mA | 12.2nC @ 10V | 768pF @ 15V | 4.5V, 10V | ±20V | ||
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获得报价 |
2,848
有现货
|
NXP USA Inc. | MOSFET N-CH 30V QFN3333 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 50W (Tc) | N-Channel | - | 30V | 21A (Tc) | 9 mOhm @ 5A, 10V | 2.15V @ 1mA | 20.6nC @ 10V | 1193pF @ 15V | 4.5V, 10V | ±20V | ||
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获得报价 |
1,128
有现货
|
Infineon Technologies | MOSFET N-CH 100V 21A D2PAK | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 90W (Tc) | N-Channel | - | 100V | 21A (Tc) | 80 mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | 10V | ±20V | ||
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获得报价 |
3,316
有现货
|
Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | ||
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获得报价 |
2,091
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 68W (Tc) | N-Channel | - | 150V | 21A (Tc) | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | 8V, 10V | ±20V | ||
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获得报价 |
2,262
有现货
|
Infineon Technologies | MOSFET N-CH 600V 21A D2PAK | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 192W (Tc) | N-Channel | - | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | ||
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获得报价 |
744
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 21A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.1W (Ta), 29.7W (Tc) | N-Channel | - | 100V | 21A (Tc) | 33 mOhm @ 10A, 10V | 3V @ 250µA | 19.5nC @ 10V | 550pF @ 50V | 4.5V, 10V | ±20V | ||
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获得报价 |
3,967
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 57W (Tc) | N-Channel | - | 150V | 21A (Tc) | 52 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 890pF @ 75V | 8V, 10V | ±20V | ||
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获得报价 |
1,811
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A 8-TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 57W (Tc) | N-Channel | - | 150V | 21A (Tc) | 52 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 890pF @ 75V | 8V, 10V | ±20V | ||
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获得报价 |
1,976
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 68W (Tc) | N-Channel | - | 150V | 21A (Tc) | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | 8V, 10V | ±20V | ||
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获得报价 |
3,851
有现货
|
Diodes Incorporated | MOSFET P-CH 30V POWERDI5060-8 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.28W | P-Channel | - | 30V | 21A (Tc) | 28 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1.372nF @ 15V | 4.5V, 10V | ±20V | ||
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获得报价 |
1,834
有现货
|
Infineon Technologies | MOSFET N-CH 560V 21A TO-263 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | ||
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获得报价 |
2,641
有现货
|
ON Semiconductor | MOSFET N-CH 200V 21A D2PAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 140W (Tc) | N-Channel | - | 200V | 21A (Tc) | 140 mOhm @ 10.5A, 10V | 2V @ 250µA | 35nC @ 5V | 2200pF @ 25V | 5V, 10V | ±20V | ||
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获得报价 |
1,887
有现货
|
Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 15.6W (Tc) | N-Channel | - | 40V | 21A (Tc) | 19 mOhm @ 10A, 10V | 2.5V @ 250µA | 18nC @ 10V | 600pF @ 20V | 4.5V, 10V | ±20V |
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