- FET型 :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,091
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 68W (Tc) | N-Channel | - | 150V | 21A (Tc) | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | 8V, 10V | ±20V | ||
|
|
获得报价 |
744
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 21A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.1W (Ta), 29.7W (Tc) | N-Channel | - | 100V | 21A (Tc) | 33 mOhm @ 10A, 10V | 3V @ 250µA | 19.5nC @ 10V | 550pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,967
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 57W (Tc) | N-Channel | - | 150V | 21A (Tc) | 52 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 890pF @ 75V | 8V, 10V | ±20V | ||
|
|
获得报价 |
1,811
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A 8-TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 57W (Tc) | N-Channel | - | 150V | 21A (Tc) | 52 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 890pF @ 75V | 8V, 10V | ±20V | ||
|
|
获得报价 |
3,851
有现货
|
Diodes Incorporated | MOSFET P-CH 30V POWERDI5060-8 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.28W | P-Channel | - | 30V | 21A (Tc) | 28 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1.372nF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,641
有现货
|
ON Semiconductor | MOSFET N-CH 200V 21A D2PAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 140W (Tc) | N-Channel | - | 200V | 21A (Tc) | 140 mOhm @ 10.5A, 10V | 2V @ 250µA | 35nC @ 5V | 2200pF @ 25V | 5V, 10V | ±20V | ||
|
|
获得报价 |
1,887
有现货
|
Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 15.6W (Tc) | N-Channel | - | 40V | 21A (Tc) | 19 mOhm @ 10A, 10V | 2.5V @ 250µA | 18nC @ 10V | 600pF @ 20V | 4.5V, 10V | ±20V |