- 栅极电荷(Qg)(最大)@Vgs :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,333
有现货
|
Infineon Technologies | MOSFET N CH 100V 11A PQFN5X6 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 11A (Ta), 58A (Tc) | 13.5 mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,453
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10A 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 10A (Ta), 55A (Tc) | 14.9 mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | 2570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,289
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 114W (Tc) | N-Channel | - | 100V | 11A (Ta), 63A (Tc) | 12.4 mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | 3152pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
709
有现货
|
Infineon Technologies | MOSFET N-CH 100V 61A D2PAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 100V | 61A (Tc) | 13.9 mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | 3180pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,195
有现货
|
Infineon Technologies | MOSFET N-CH 100V 73A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,344
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10A 8-PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 100V | 10A (Ta), 55A (Tc) | 14.9 mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | 2570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,469
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | ||
|
|
获得报价 |
2,108
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,337
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V |