- 供应商设备包 :
- FET型 :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
14 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
893
有现货
|
Infineon Technologies | MOSFET N-CH 55V 19A D-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 50W (Tc) | N-Channel | - | 55V | 19A (Tc) | 85 mOhm @ 11A, 10V | 4V @ 250µA | 23nC @ 10V | 420pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,248
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,260
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,331
有现货
|
Infineon Technologies | MOSFET N-CH 500V 19A TO-254AA | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-254-3, TO-254AA (Straight Leads) | TO-254AA | 250W (Tc) | N-Channel | - | 500V | 19A (Tc) | 270 mOhm @ 12A, 10V | 4V @ 250µA | 190nC @ 10V | 4300pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,079
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,726
有现货
|
Infineon Technologies | MOSFET N CH 300V 19A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,624
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,373
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,782
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,723
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,310
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,286
有现货
|
Infineon Technologies | MOSFET N CH 300V 19A D2PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,221
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,098
有现货
|
Infineon Technologies | MOSFET N-CH 250V 19A TO-220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 46W (Tc) | N-Channel | - | 250V | 19A (Tc) | 46 mOhm @ 11A, 10V | 5V @ 250µA | 110nC @ 10V | 4480pF @ 25V | 10V | ±30V |