- 零件状态 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 驱动电压（最大Rds接通，最小Rds接通） :
19 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,909
有现货
|
NXP USA Inc. | MOSFET N-CH 100V 23A D2PAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 98W (Tc) | N-Channel | - | 100V | 23A (Tc) | 72 mOhm @ 10A, 10V | 2V @ 1mA | 49nC @ 10V | 1704pF @ 25V | 5V, 10V | ±15V | ||
|
|
获得报价 |
3,207
有现货
|
Renesas Electronics America | MOSFET N-CH 100V MP-3/TO-251 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (MP-3) | 1W (Ta), 40W (Tc) | N-Channel | - | 100V | 28A (Ta) | 52 mOhm @ 14A, 10V | - | 49nC @ 10V | 2300pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,896
有现货
|
Infineon Technologies | MOSFET N-CH TO252-3 | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | - | 100V | 60A (Tc) | 12 mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | 3170pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
获得报价 |
678
有现货
|
Infineon Technologies | MOSFET N-CH TO252-3 | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | - | 100V | 60A (Tc) | 12 mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | 3170pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
获得报价 |
2,564
有现货
|
Infineon Technologies | MOSFET N-CH TO252-3 | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | - | 100V | 60A (Tc) | 12 mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | 3170pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,704
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 40A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 100V | 40A (Tc) | 10.8 mOhm @ 20A, 10V | 2.8V @ 250µA | 49nC @ 10V | 1630pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,539
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 40A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 100V | 40A (Tc) | 10.8 mOhm @ 20A, 10V | 2.8V @ 250µA | 49nC @ 10V | 1630pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,194
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 40A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 100V | 40A (Tc) | 10.8 mOhm @ 20A, 10V | 2.8V @ 250µA | 49nC @ 10V | 1630pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,055
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | ||
|
|
|
获得报价 |
661
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | ||
|
|
|
获得报价 |
2,568
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | ||
|
|
|
获得报价 |
2,278
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V 57A D2PAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 148W (Tc) | N-Channel | - | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
2,004
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V 57A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 148W (Tc) | N-Channel | - | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
2,622
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V 57A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 148W (Tc) | N-Channel | - | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,030
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 148W (Tc) | N-Channel | - | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,814
有现货
|
IXYS | MOSFET N-CH 100V 60A TO-263 | TrenchMV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 176W (Tc) | N-Channel | - | 100V | 60A (Tc) | 18 mOhm @ 25A, 10V | 4.5V @ 50µA | 49nC @ 10V | 2650pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
667
有现货
|
IXYS | MOSFET N-CH 100V 60A TO-220 | TrenchMV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 176W (Tc) | N-Channel | - | 100V | 60A (Tc) | 18 mOhm @ 25A, 10V | 4.5V @ 50µA | 49nC @ 10V | 2650pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,756
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 40A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,761
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 90A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 126W (Tc) | N-Channel | - | 100V | 90A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V |
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