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25°C时的电流-连续漏极(Id) :
输入电容(Ciss)(最大)@Vds :
驱动电压(最大Rds接通,最小Rds接通) :
20 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IPU78CN10N G
获得报价
RFQ
3,555
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPI80CN10N G
获得报价
RFQ
1,763
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 31W (Tc) N-Channel - 100V 13A (Tc) 80 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPB79CN10N G
获得报价
RFQ
968
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO263-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 31W (Tc) N-Channel - 100V 13A (Tc) 79 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPP80CN10NGHKSA1
获得报价
RFQ
3,302
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 31W (Tc) N-Channel - 100V 13A (Tc) 80 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
SI4102DY-T1-E3
获得报价
RFQ
2,832
有现货
Vishay Siliconix MOSFET N-CH 100V 3.8A 8-SOIC TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.4W (Ta), 4.8W (Tc) N-Channel - 100V 3.8A (Tc) 158 mOhm @ 2.7A, 10V 4V @ 250µA 11nC @ 10V 370pF @ 50V 6V, 10V ±20V
IPD78CN10NGATMA1
获得报价
RFQ
1,193
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO252-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPD78CN10NGATMA1
单位
$0.88
获得报价
RFQ
2,218
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPD78CN10NGATMA1
单位
$0.30
获得报价
RFQ
3,736
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPD78CN10NGBUMA1
获得报价
RFQ
1,294
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO252-3 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPD78CN10NGBUMA1
单位
$0.70
获得报价
RFQ
2,004
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPD78CN10NGBUMA1
获得报价
RFQ
3,945
有现货
Infineon Technologies MOSFET N-CH 100V 13A TO252-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
FDMS86105
获得报价
RFQ
2,326
有现货
ON Semiconductor MOSFET N-CH 100V POWER56 PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 48W (Tc) N-Channel - 100V 6A (Ta), 26A (Tc) 34 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 645pF @ 50V 6V, 10V ±20V
FDMS86105
单位
$1.59
获得报价
RFQ
3,809
有现货
ON Semiconductor MOSFET N-CH 100V POWER56 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 48W (Tc) N-Channel - 100V 6A (Ta), 26A (Tc) 34 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 645pF @ 50V 6V, 10V ±20V
FDMS86105
单位
$0.61
获得报价
RFQ
2,244
有现货
ON Semiconductor MOSFET N-CH 100V POWER56 PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 48W (Tc) N-Channel - 100V 6A (Ta), 26A (Tc) 34 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 645pF @ 50V 6V, 10V ±20V
SI4102DY-T1-GE3
获得报价
RFQ
2,066
有现货
Vishay Siliconix MOSFET N-CH 100V 3.8A 8-SOIC TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.4W (Ta), 4.8W (Tc) N-Channel - 100V 3.8A (Tc) 158 mOhm @ 2.7A, 10V 4V @ 250µA 11nC @ 10V 370pF @ 50V 6V, 10V ±20V
SI4102DY-T1-GE3
单位
$1.08
获得报价
RFQ
3,479
有现货
Vishay Siliconix MOSFET N-CH 100V 3.8A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.4W (Ta), 4.8W (Tc) N-Channel - 100V 3.8A (Tc) 158 mOhm @ 2.7A, 10V 4V @ 250µA 11nC @ 10V 370pF @ 50V 6V, 10V ±20V
SI4102DY-T1-GE3
单位
$0.42
获得报价
RFQ
1,642
有现货
Vishay Siliconix MOSFET N-CH 100V 3.8A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.4W (Ta), 4.8W (Tc) N-Channel - 100V 3.8A (Tc) 158 mOhm @ 2.7A, 10V 4V @ 250µA 11nC @ 10V 370pF @ 50V 6V, 10V ±20V
TPN3300ANH,LQ
获得报价
RFQ
2,511
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 100V 9.4A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 100V 9.4A (Tc) 33 mOhm @ 4.7A, 10V 4V @ 100µA 11nC @ 10V 880pF @ 50V 10V ±20V
TPN3300ANH,LQ
单位
$0.99
获得报价
RFQ
3,337
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 100V 9.4A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 100V 9.4A (Tc) 33 mOhm @ 4.7A, 10V 4V @ 100µA 11nC @ 10V 880pF @ 50V 10V ±20V
TPN3300ANH,LQ
单位
$0.35
获得报价
RFQ
3,391
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 100V 9.4A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 100V 9.4A (Tc) 33 mOhm @ 4.7A, 10V 4V @ 100µA 11nC @ 10V 880pF @ 50V 10V ±20V
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