- FET特性 :
- 25°C时的电流-连续漏极（Id） :
-
- 10.5A (Tc) (1)
- 10A (Ta) (3)
- 149A (Tc) (1)
- 163A (Tc) (1)
- 195A (Tc) (1)
- 1A (Ta) (3)
- 2.8A (Tc) (1)
- 3.1A (Tc) (4)
- 3.4A (Ta) (3)
- 3.6A (Tc) (1)
- 317A (Tc) (1)
- 31A (Ta) (6)
- 33A (Ta) (3)
- 4.3A (Tc) (1)
- 4.5A (Tc) (1)
- 4.6A (Ta), 26A (Tc) (2)
- 48A (Ta) (3)
- 500mA (Ta) (3)
- 5A (Tc) (1)
- 6.8A (Ta) (3)
- 6.8A (Tc) (1)
- 60A (Ta) (6)
- 65A (Tc) (1)
- 7A (Tc) (1)
- 9A (Ta), 30A (Tc) (2)
- 9A (Ta), 40A (Tc) (2)
- Rds开启（最大）@Id，Vgs :
-
- 1 Ohm @ 1.5A, 10V (1)
- 1.3 mOhm @ 40A, 5V (3)
- 1.4 Ohm @ 2.3A, 10V (1)
- 1.5 Ohm @ 1.1A, 10V (4)
- 10 mOhm @ 20A, 5V (3)
- 13.4 mOhm @ 30A, 10V (2)
- 145 mOhm @ 32.5A, 10V (1)
- 16 mOhm @ 5A, 5V (3)
- 19 mOhm @ 81.5A, 10V (1)
- 2.2 mOhm @ 31A, 5V (3)
- 22 mOhm @ 6A, 5V (3)
- 25 mOhm @ 74.5A, 10V (1)
- 28 mOhm @ 1.5A, 5V (3)
- 28 mOhm @ 30A, 10V (2)
- 3.3 Ohm @ 50mA, 5V (3)
- 310 mOhm @ 11A, 10V (1)
- 4 mOhm @ 30A, 5V (3)
- 4 mOhm @ 33A, 5V (3)
- 460 mOhm @ 7.1A, 10V (1)
- 5 mOhm @ 158.5A, 10V (1)
- 550 mOhm @ 100mA, 5V (3)
- 59.9 mOhm @ 5.5A, 10V (2)
- 600 mOhm @ 1A, 10V (1)
- 650 mOhm @ 2.4A, 10V (1)
- 650 mOhm @ 5.1A, 10V (1)
- 7 mOhm @ 25A, 5V (3)
- 9 mOhm @ 74.5A, 10V (1)
- 950 mOhm @ 3.6A, 10V (1)
- Vgs（th）（最大）@Id :
-
- 2.5V @ 11mA (3)
- 2.5V @ 16mA (3)
- 2.5V @ 1mA (3)
- 2.5V @ 20mA (3)
- 2.5V @ 20µA (3)
- 2.5V @ 2mA (6)
- 2.5V @ 7mA (3)
- 2.5V @ 80µA (3)
- 2.5V @ 9mA (6)
- 3.5V @ 0.21mA (1)
- 3.5V @ 130µA (1)
- 3.5V @ 200µA (1)
- 3.5V @ 40µA (2)
- 3.5V @ 90µA (4)
- 3.9V @ 1mA (1)
- 3.9V @ 240µA (1)
- 3.9V @ 250µA (1)
- 3.9V @ 470µA (1)
- 3.9V @ 680µA (1)
- 4.9V @ 150µA (2)
- 4V @ 10mA (1)
- 4V @ 60µA (2)
- 5V @ 10mA (3)
- 5V @ 4mA (1)
- 栅极电荷（Qg）（最大）@Vgs :
-
- 0.044nC @ 5V (3)
- 0.12nC @ 5V (3)
- 0.93nC @ 5V (3)
- 10nC @ 5V (3)
- 11.6nC @ 5V (3)
- 13nC @ 10V (1)
- 15nC @ 5V (3)
- 16nC @ 5V (3)
- 2.8nC @ 5V (3)
- 20.5nC @ 10V (1)
- 2000nC @ 10V (1)
- 20nC @ 5V (3)
- 217nC @ 10V (1)
- 21nC @ 10V (2)
- 22nC @ 10V (1)
- 23nC @ 10V (1)
- 2nC @ 5V (3)
- 30nC @ 10V (2)
- 31nC @ 10V (1)
- 364nC @ 10V (1)
- 448nC @ 10V (1)
- 45nC @ 10V (1)
- 48nC @ 10V (2)
- 492nC @ 10V (1)
- 64nC @ 10V (1)
- 8.5nC @ 5V (3)
- 9.4nC @ 10V (4)
- 91nC @ 10V (1)
- 输入电容（Ciss）（最大）@Vds :
-
- 100pF @ 6V (3)
- 1100pF @ 100V (1)
- 1140pF @ 75V (3)
- 12.5pF @ 50V (3)
- 1200pF @ 20V (3)
- 12300pF @ 25V (1)
- 1530pF @ 50V (3)
- 1600pF @ 100V (1)
- 1600pF @ 75V (2)
- 17500pF @ 25V (1)
- 1800pF @ 30V (3)
- 200pF @ 100V (4)
- 210pF @ 40V (3)
- 22400pF @ 25V (1)
- 2290pF @ 25V (2)
- 2300pF @ 15V (3)
- 2300pF @ 50V (2)
- 2320pF @ 100V (1)
- 27400pF @ 25V (1)
- 280pF @ 100V (1)
- 31600pF @ 25V (1)
- 325pF @ 20V (3)
- 440pF @ 100V (1)
- 474pF @ 100V (1)
- 570pF @ 100V (1)
- 785pF @ 100V (1)
- 8.4pF @ 50V (3)
- 940pF @ 100V (3)
- 驱动电压（最大Rds接通，最小Rds接通） :
- Vgs（最大值） :
56 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,786
有现货
|
Infineon Technologies | MOSFET N-CH 700V 10.5A TO-251 | CoolMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 86W (Tc) | N-Channel | Super Junction | 700V | 10.5A (Tc) | 600 mOhm @ 1A, 10V | 3.5V @ 0.21mA | 22nC @ 10V | 474pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
1,573
有现货
|
Infineon Technologies | MOSFET N-CH 600V 7A TO252 | CoolMOS™ CE | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 82W (Tc) | N-Channel | - | 600V | 7A (Tc) | 650 mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,270
有现货
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
878
有现货
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | ||
|
|
获得报价 |
703
有现货
|
Microsemi Corporation | MOSFET N-CH 500V 149A J3 | - | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | J3 Module | Module | 1250W (Tc) | N-Channel | - | 500V | 149A (Tc) | 25 mOhm @ 74.5A, 10V | 5V @ 10mA | 364nC @ 10V | 17500pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,313
有现货
|
Microsemi Corporation | MOSFET N-CH 500V 163A J3 | - | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | J3 Module | Module | 1136W (Tc) | N-Channel | - | 500V | 163A (Tc) | 19 mOhm @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
710
有现货
|
Microsemi Corporation | MOSFET N-CH 200V 195A J3 | - | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | J3 Module | Module | 780W (Tc) | N-Channel | - | 200V | 195A (Tc) | 9 mOhm @ 74.5A, 10V | 5V @ 4mA | 217nC @ 10V | 12300pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,997
有现货
|
Microsemi Corporation | MOSFET N-CH 200V 317A J3 | - | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | J3 Module | Module | 1136W (Tc) | N-Channel | - | 200V | 317A (Tc) | 5 mOhm @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | 27400pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,543
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 65A J3 | - | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | J3 Module | Module | 1250W (Tc) | N-Channel | - | 1000V | 65A (Tc) | 145 mOhm @ 32.5A, 10V | 4V @ 10mA | 2000nC @ 10V | 31600pF @ 25V | 10V | ±30V | ||
.jpg)
|
|
获得报价 |
966
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | ||
|
|
|
获得报价 |
943
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | ||
|
|
|
获得报价 |
739
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | ||
|
|
获得报价 |
3,981
有现货
|
EPC | TRANS GAN 15V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 15V | 3.4A (Ta) | 28 mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | 100pF @ 6V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
2,381
有现货
|
EPC | TRANS GAN 15V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 15V | 3.4A (Ta) | 28 mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | 100pF @ 6V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
2,474
有现货
|
EPC | TRANS GAN 15V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 15V | 3.4A (Ta) | 28 mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | 100pF @ 6V | 5V | +6V, -4V | ||
|
|
获得报价 |
2,847
有现货
|
EPC | TRANS GAN 30V 60A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 30V | 60A (Ta) | 1.3 mOhm @ 40A, 5V | 2.5V @ 20mA | 20nC @ 5V | 2300pF @ 15V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
2,491
有现货
|
EPC | TRANS GAN 30V 60A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 30V | 60A (Ta) | 1.3 mOhm @ 40A, 5V | 2.5V @ 20mA | 20nC @ 5V | 2300pF @ 15V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
3,210
有现货
|
EPC | TRANS GAN 30V 60A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 30V | 60A (Ta) | 1.3 mOhm @ 40A, 5V | 2.5V @ 20mA | 20nC @ 5V | 2300pF @ 15V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,257
有现货
|
EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 12.5pF @ 50V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
3,652
有现货
|
EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 12.5pF @ 50V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
3,727
有现货
|
EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 12.5pF @ 50V | 5V | +6V, -4V | ||
|
|
获得报价 |
638
有现货
|
Infineon Technologies | MOSFET N-CH 600V TO-252-3 | CoolMOS™ CE | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 28W (Tc) | N-Channel | - | 600V | 3.1A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
3,199
有现货
|
Infineon Technologies | MOSFET N-CH 600V TO-252-3 | CoolMOS™ CE | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 28W (Tc) | N-Channel | - | 600V | 3.1A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
869
有现货
|
Infineon Technologies | MOSFET N-CH 600V TO-252-3 | CoolMOS™ CE | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 28W (Tc) | N-Channel | - | 600V | 3.1A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
605
有现货
|
Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | OptiMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 150V | 9A (Ta), 30A (Tc) | 28 mOhm @ 30A, 10V | 4V @ 60µA | 21nC @ 10V | 1600pF @ 75V | 10V | ±20V | ||
|
|
|
获得报价 |
1,112
有现货
|
Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 150V | 9A (Ta), 30A (Tc) | 28 mOhm @ 30A, 10V | 4V @ 60µA | 21nC @ 10V | 1600pF @ 75V | 10V | ±20V | ||
|
|
|
获得报价 |
3,900
有现货
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | ||
|
|
获得报价 |
2,138
有现货
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
1,007
有现货
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
1,875
有现货
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V |
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