- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,345
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 1.7A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | N-Channel | - | 400V | 1.7A (Tc) | 3.6 Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,314
有现货
|
STMicroelectronics | MOSFET N-CH 600V 0.4A TO-92 | SuperMESH™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 3W (Tc) | N-Channel | - | 600V | 400mA (Tc) | 8 Ohm @ 700mA, 10V | 4.5V @ 50µA | 10nC @ 10V | 170pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,087
有现货
|
Infineon Technologies | MOSFET P-CH 30V 2.4A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | P-Channel | - | 30V | 2.4A (Ta) | 180 mOhm @ 1.6A, 10V | 1V @ 250µA | 11nC @ 10V | 170pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,552
有现货
|
ON Semiconductor | MOSFET N-CH 600V 1A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 28W (Tc) | N-Channel | - | 600V | 1A (Tc) | 11.5 Ohm @ 500mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,741
有现货
|
Vishay Siliconix | MOSFET P-CH 200V 1.9A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | P-Channel | - | 200V | 1.9A (Tc) | 3 Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,148
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 1.7A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | N-Channel | - | 400V | 1.7A (Tc) | 3.6 Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,022
有现货
|
ON Semiconductor | MOSFET N-CH 600V 300MA TO-92 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta), 3W (Tc) | N-Channel | - | 600V | 300mA (Tc) | 11.5 Ohm @ 150mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,087
有现货
|
ON Semiconductor | MOSFET N-CH 600V 0.2A SOT-223-4 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2.1W (Tc) | N-Channel | - | 600V | 200mA (Tc) | 11.5 Ohm @ 100mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V |