- 供应商设备包 :
- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,892
有现货
|
Infineon Technologies | MOSFET N-CH 100V 160A TO263-7 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | PG-TO263-7 | 214W (Tc) | N-Channel | - | 100V | 160A (Tc) | 3.9 mOhm @ 100A, 10V | 3.5V @ 160µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
2,878
有现货
|
IXYS | MOSFET N-CH 100V 130A TO-263-7 | TrenchMV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | TO-263 (IXTA) | 360W (Tc) | N-Channel | - | 100V | 130A (Tc) | 9.1 mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | 5080pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,754
有现货
|
Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK | 380W (Tc) | N-Channel | - | 100V | 190A (Tc) | 4 mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
681
有现货
|
Infineon Technologies | MOSFET N-CH 100V 160A TO263-7 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | PG-TO263-7 | 214W (Tc) | N-Channel | - | 100V | 160A (Tc) | 3.9 mOhm @ 100A, 10V | 3.5V @ 160µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
1,501
有现货
|
Infineon Technologies | MOSFET N-CH 100V 160A TO263-7 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | PG-TO263-7 | 214W (Tc) | N-Channel | - | 100V | 160A (Tc) | 3.9 mOhm @ 100A, 10V | 3.5V @ 160µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
3,250
有现货
|
Infineon Technologies | MOSFET N-CH 100V 160A TO263-7 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | PG-TO263-7 | 214W (Tc) | N-Channel | - | 100V | 160A (Tc) | 3.9 mOhm @ 100A, 10V | 3.5V @ 160µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
2,193
有现货
|
Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK | 380W (Tc) | N-Channel | - | 100V | 190A (Tc) | 4 mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,436
有现货
|
Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK | 380W (Tc) | N-Channel | - | 100V | 190A (Tc) | 4 mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,963
有现货
|
Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK | 380W (Tc) | N-Channel | - | 100V | 190A (Tc) | 4 mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | 10V | ±20V |