- 包装材料 :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
18 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
2,946
有现货
|
Infineon Technologies | MOSFET N-CH 100V 48A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 100V | 48A (Tc) | 25 mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | 3430pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
849
有现货
|
Infineon Technologies | MOSFET N-CH 100V 48A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 100V | 48A (Tc) | 25 mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | 3430pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,886
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,598
有现货
|
Infineon Technologies | MOSFET N-CH 100V 48A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 100V | 48A (Tc) | 25 mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | 3430pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,973
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,585
有现货
|
IXYS | MOSFET N-CH 100V 75A TO-3P | PolarHT™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 360W (Tc) | N-Channel | - | 100V | 75A (Tc) | 25 mOhm @ 500mA, 10V | 5.5V @ 250µA | 74nC @ 10V | 2250pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,960
有现货
|
Infineon Technologies | MOSFET N-CH 100V 75A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 75A (Tc) | 14 mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | 6160pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,156
有现货
|
Infineon Technologies | MOSFET N-CH 100V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 75A (Tc) | 14 mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | 6160pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,776
有现货
|
Infineon Technologies | MOSFET N-CH 100V 48A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 100V | 48A (Tc) | 25 mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | 3430pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
990
有现货
|
Infineon Technologies | MOSFET N-CH 100V 48A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | - | 100V | 48A (Tc) | 25 mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | 3430pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,269
有现货
|
Infineon Technologies | MOSFET N-CH 100V 75A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 75A (Tc) | 14 mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | 6160pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,024
有现货
|
IXYS | MOSFET N-CH 100V 75A TO-263 | PolarHT™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 360W (Tc) | N-Channel | - | 100V | 75A (Tc) | 25 mOhm @ 500mA, 10V | 5.5V @ 250µA | 74nC @ 10V | 2250pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,381
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,575
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,180
有现货
|
IXYS | MOSFET N-CH 100V 75A TO-220 | PolarHT™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 360W (Tc) | N-Channel | - | 100V | 75A (Tc) | 25 mOhm @ 500mA, 10V | 5.5V @ 250µA | 74nC @ 10V | 2250pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,933
有现货
|
ON Semiconductor | MOSFET N-CH 100V 80A TO-220AB | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 255W (Tc) | N-Channel | - | 100V | 80A (Tc) | 18 mOhm @ 80A, 10V | 5.5V @ 250µA | 69nC @ 10V | 5522pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
700
有现货
|
Infineon Technologies | MOSFET N-CH 100V 72A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 190W (Tc) | N-Channel | - | 100V | 72A (Tc) | 14 mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | 6160pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,109
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V |