- 零件状态 :
- 通道类型 :
- 逻辑电压-VIL,VIH :
- 电流-峰值输出(源、汇) :
- 上升/下降时间(典型) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 输入类型 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 电压源 | 通道类型 | 驱动配置 | 司机人数 | 门型 | 逻辑电压-VIL,VIH | 电流-峰值输出(源、汇) | 高压侧电压-最大值(自举) | 上升/下降时间(典型) | |
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|
获得报价 |
2,234
有现货
|
Intersil | IC DRIVER FET H-BRDG 80V 16SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SO | 8.5 V ~ 15 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 1V, 2.5V | 1.4A, 1.3A | 95V | 9ns, 9ns | |||
|
获得报价 |
2,709
有现货
|
STMicroelectronics | IC CTRLR PWM POWER MOS SO-16 | - | Obsolete | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SO | 6 V ~ 16 V | Single | High-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2V | - | - | - | |||
|
获得报价 |
2,801
有现货
|
Diodes Incorporated | IC GATE DRVR HALF-BRIDGE 16SO | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 600V | 15ns, 13ns | |||
|
获得报价 |
2,423
有现货
|
Diodes Incorporated | IC GATE DRVR HALF-BRIDGE 16SO | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 500V | 15ns, 13ns | |||
|
获得报价 |
3,675
有现货
|
STMicroelectronics | IC DRIVER MOS/IGBT TRIPLE 16SOIC | - | Active | Tape & Reel (TR) | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SO | 4 V ~ 16 V | Independent | Low-Side | 3 | IGBT, N-Channel MOSFET | 0.8V, 2V | - | - | - | |||
|
获得报价 |
1,415
有现货
|
STMicroelectronics | IC DRIVER HV HI/LOW SIDE 16SO | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SO | 12.5 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 1.1V, 1.9V | 290mA, 430mA | 600V | 75ns, 35ns |