- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
- Vgs(最大值) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,952
有现货
|
Renesas Electronics America | MOSFET P-CH 60V 83A TO-263 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 150W (Tc) | P-Channel | 60V | 83A (Tc) | 8.8 mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190nC @ 10V | 10100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,965
有现货
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | 100V | 120A (Tc) | 10.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | 9000pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,304
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 45A 8SOP-ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | P-Channel | 30V | 45A (Ta) | 3 mOhm @ 22.5A, 10V | 2V @ 1mA | 190nC @ 10V | 7420pF @ 10V | 4.5V, 10V | +20V, -25V | |||
|
获得报价 |
2,358
有现货
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | 100V | 120A (Tc) | 10.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | 7000pF @ 50V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,711
有现货
|
Vishay Siliconix | MOSFET P-CH 20V 26.6A 8-SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3W (Ta), 6.6W (Tc) | P-Channel | 20V | 26.6A (Tc) | 6.2 mOhm @ 18A, 4.5V | 1.5V @ 250µA | 190nC @ 10V | 4600pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
2,876
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 8.6A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | P-Channel | 60V | 8.6A (Ta) | 14.5 mOhm @ 14.4A, 10V | 3V @ 250µA | 190nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,476
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 8.6A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | P-Channel | 60V | 8.6A (Ta) | 14.5 mOhm @ 14.4A, 10V | 3V @ 250µA | 190nC @ 10V | - | 4.5V, 10V | ±20V |