晶体管 - FET，MOSFET - 单电池 - 深圳市恒森鑫电子有限公司

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16 产品

图片	型号	价格	数量		库存	制造商	描述	系列	零件状态	包装材料	技术	工作温度	安装类型	包装/箱	供应商设备包	功耗（最大）	FET型	FET特性	漏极-源极电压（Vdss）	25°C时的电流-连续漏极（Id）	Rds开启（最大）@Id，Vgs	Vgs（th）（最大）@Id	栅极电荷（Qg）（最大）@Vgs	输入电容（Ciss）（最大）@Vds	驱动电压（最大Rds接通，最小Rds接通）	Vgs（最大值）
	AUIRF3315S		获得报价	PDF RFQ	884 有现货	Infineon Technologies	MOSFET N-CH 150V 21A D2PAK	HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 94W (Tc)	N-Channel	-	150V	21A (Tc)	82 mOhm @ 12A, 10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	10V	±20V
	IRF3315L		获得报价	PDF RFQ	3,438 有现货	Infineon Technologies	MOSFET N-CH 150V 21A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 94W (Tc)	N-Channel	-	150V	21A (Tc)	82 mOhm @ 12A, 10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	10V	±20V
	IRFU1205		获得报价	PDF RFQ	1,315 有现货	Infineon Technologies	MOSFET N-CH 55V 44A I-PAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	107W (Tc)	N-Channel	-	55V	44A (Tc)	27 mOhm @ 26A, 10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	10V	±20V
	IRF3315S		获得报价	PDF RFQ	808 有现货	Infineon Technologies	MOSFET N-CH 150V 21A D2PAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 94W (Tc)	N-Channel	-	150V	21A (Tc)	82 mOhm @ 12A, 10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	10V	±20V
	IRF3315		获得报价	PDF RFQ	2,447 有现货	Infineon Technologies	MOSFET N-CH 150V 27A TO-220AB	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	136W (Tc)	N-Channel	-	150V	27A (Tc)	70 mOhm @ 12A, 10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	10V	±20V
	IRFR1205		获得报价	PDF RFQ	3,654 有现货	Infineon Technologies	MOSFET N-CH 55V 44A DPAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	107W (Tc)	N-Channel	-	55V	44A (Tc)	27 mOhm @ 26A, 10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	10V	±20V
	IRC640PBF		获得报价	PDF RFQ	3,736 有现货	Vishay Siliconix	MOSFET N-CH 200V 18A TO-220-5	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5	125W (Tc)	N-Channel	Current Sensing	200V	18A (Tc)	180 mOhm @ 11A, 10V	4V @ 250µA	70nC @ 10V	1300pF @ 25V	10V	±20V
	IRC540PBF		获得报价	PDF RFQ	1,301 有现货	Vishay Siliconix	MOSFET N-CH 100V 28A TO-220-5	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-5	TO-220-5	150W (Tc)	N-Channel	Current Sensing	100V	28A (Tc)	77 mOhm @ 17A, 10V	4V @ 250µA	69nC @ 10V	1300pF @ 25V	10V	±20V
	IRC840PBF		获得报价	PDF RFQ	3,008 有现货	Vishay Siliconix	MOSFET N-CH 500V 8A TO-220-5	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5	125W (Tc)	N-Channel	Current Sensing	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	67nC @ 10V	1300pF @ 25V	10V	±20V
	IRF3315LPBF		获得报价	PDF RFQ	3,020 有现货	Infineon Technologies	MOSFET N-CH 150V 21A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 94W (Tc)	N-Channel	-	150V	21A (Tc)	82 mOhm @ 12A, 10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	10V	±20V
	IRF3315SPBF		获得报价	PDF RFQ	934 有现货	Infineon Technologies	MOSFET N-CH 150V 21A D2PAK	HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 94W (Tc)	N-Channel	-	150V	21A (Tc)	82 mOhm @ 12A, 10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	10V	±20V
	IRCZ34PBF		获得报价	PDF RFQ	3,806 有现货	Vishay Siliconix	MOSFET N-CH 60V 30A TO-220-5	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-5	TO-220-5	88W (Tc)	N-Channel	Current Sensing	60V	30A (Tc)	50 mOhm @ 18A, 10V	4V @ 250µA	46nC @ 10V	1300pF @ 25V	10V	±20V
	IRFU1205PBF	单位 $1.13	获得报价	PDF RFQ	2,457 有现货	Infineon Technologies	MOSFET N-CH 55V 44A I-PAK	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	107W (Tc)	N-Channel	-	55V	44A (Tc)	27 mOhm @ 26A, 10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	10V	±20V
	IRF3315PBF	单位 $1.64	获得报价	PDF RFQ	3,032 有现货	Infineon Technologies	MOSFET N-CH 150V 23A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	94W (Tc)	N-Channel	-	150V	23A (Tc)	70 mOhm @ 12A, 10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	10V	±20V
	IRFR1205PBF	单位 $1.35	获得报价	PDF RFQ	2,866 有现货	Infineon Technologies	MOSFET N-CH 55V 44A DPAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	107W (Tc)	N-Channel	-	55V	44A (Tc)	27 mOhm @ 26A, 10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	10V	±20V
	IRFIZ44NPBF	单位 $1.70	获得报价	PDF RFQ	730 有现货	Infineon Technologies	MOSFET N-CH 55V 31A TO220FP	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak	45W (Tc)	N-Channel	-	55V	31A (Tc)	24 mOhm @ 17A, 10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	10V	±20V

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