- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
15 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,748
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 5.5A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 74W (Tc) | N-Channel | Current Sensing | 400V | 5.5A (Tc) | 1 Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,039
有现货
|
Infineon Technologies | MOSFET N-CH 55V 27A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 68W (Tc) | N-Channel | - | 55V | 27A (Tc) | 45 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,089
有现货
|
Infineon Technologies | MOSFET N-CH 55V 29A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,097
有现货
|
Infineon Technologies | MOSFET N-CH 55V 27A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 68W (Tc) | N-Channel | - | 55V | 27A (Tc) | 45 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
862
有现货
|
Infineon Technologies | MOSFET N-CH 55V 29A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,896
有现货
|
Infineon Technologies | MOSFET N-CH 60V 21A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 37W (Tc) | N-Channel | - | 60V | 21A (Tc) | 42 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,527
有现货
|
Infineon Technologies | MOSFET N-CH 55V 27A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 68W (Tc) | N-Channel | - | 55V | 27A (Tc) | 45 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,685
有现货
|
Infineon Technologies | MOSFET N-CH 55V 20A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 68W (Tc) | N-Channel | - | 55V | 20A (Tc) | 45 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
611
有现货
|
Infineon Technologies | MOSFET N-CH 55V 29A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,184
有现货
|
Infineon Technologies | MOSFET N-CH 55V 29A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 68W (Tc) | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,182
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 14A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 88W (Tc) | N-Channel | Current Sensing | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,882
有现货
|
Infineon Technologies | MOSFET N-CH 55V 29A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,337
有现货
|
Infineon Technologies | MOSFET N-CH 55V 29A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 68W (Tc) | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
735
有现货
|
Infineon Technologies | MOSFET N-CH 55V 27A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 68W (Tc) | N-Channel | - | 55V | 27A (Tc) | 45 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,349
有现货
|
Infineon Technologies | MOSFET N-CH 55V 21A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 37W (Tc) | N-Channel | - | 55V | 21A (Tc) | 40 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V |