- 供应商设备包 :
- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,067
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | |||
|
获得报价 |
839
有现货
|
Infineon Technologies | MOSFET N-CH 30V 61A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 47W (Tc) | N-Channel | - | 30V | 61A (Tc) | 7 mOhm @ 37A, 10V | 1V @ 250µA | 110nC @ 4.5V | 3500pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
3,841
有现货
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,559
有现货
|
Infineon Technologies | MOSFET N-CH 30V 61A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 47W (Tc) | N-Channel | - | 30V | 61A (Tc) | 7 mOhm @ 37A, 10V | 1V @ 250µA | 110nC @ 4.5V | 3500pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
1,924
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | |||
|
获得报价 |
1,983
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | |||
|
获得报价 |
2,941
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | |||
|
获得报价 |
2,822
有现货
|
Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V |