- 功耗(最大) :
- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
749
有现货
|
Infineon Technologies | MOSFET N-CH 60V 56A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
获得报价 |
1,154
有现货
|
Infineon Technologies | MOSFET N-CH 60V 79A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
获得报价 |
2,227
有现货
|
Infineon Technologies | MOSFET N-CH 60V 79A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
获得报价 |
2,244
有现货
|
Infineon Technologies | MOSFET N-CH 60V 79A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
获得报价 |
3,520
有现货
|
Infineon Technologies | MOSFET N-CH 60V 79A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | - | - | |||
|
获得报价 |
1,301
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 28A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 150W (Tc) | N-Channel | Current Sensing | 100V | 28A (Tc) | 77 mOhm @ 17A, 10V | 4V @ 250µA | 69nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,753
有现货
|
Infineon Technologies | MOSFET N-CH 60V 79A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
获得报价 |
1,665
有现货
|
Infineon Technologies | MOSFET N-CH 60V 79A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
获得报价 |
2,333
有现货
|
Infineon Technologies | MOSFET N-CH 60V 79A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V |