晶体管 - FET，MOSFET - 单电池 - 深圳市恒森鑫电子有限公司

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15 产品

图片	型号	价格	数量		库存	制造商	描述	系列	零件状态	包装材料	技术	工作温度	安装类型	包装/箱	供应商设备包	功耗（最大）	FET型	FET特性	漏极-源极电压（Vdss）	25°C时的电流-连续漏极（Id）	Rds开启（最大）@Id，Vgs	Vgs（th）（最大）@Id	栅极电荷（Qg）（最大）@Vgs	输入电容（Ciss）（最大）@Vds	驱动电压（最大Rds接通，最小Rds接通）	Vgs（最大值）
	IRFS7762PBF		获得报价	PDF RFQ	2,839 有现货	Infineon Technologies	MOSFET N-CH 75V 104A D2PAK	HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	140W (Tc)	N-Channel	-	75V	85A (Tc)	6.7 mOhm @ 51A, 10V	3.7V @ 100µA	130nC @ 10V	4440pF @ 25V	6V, 10V	±20V
	IRFS3507		获得报价	PDF RFQ	600 有现货	Infineon Technologies	MOSFET N-CH 75V 97A D2PAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	190W (Tc)	N-Channel	-	75V	97A (Tc)	8.8 mOhm @ 58A, 10V	4V @ 100µA	130nC @ 10V	3540pF @ 50V	10V	±20V
	IRFSL3507		获得报价	PDF RFQ	831 有现货	Infineon Technologies	MOSFET N-CH 75V 97A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	190W (Tc)	N-Channel	-	75V	97A (Tc)	8.8 mOhm @ 58A, 10V	4V @ 100µA	130nC @ 10V	3540pF @ 50V	10V	±20V
	IRFB3507PBF		获得报价	PDF RFQ	1,582 有现货	Infineon Technologies	MOSFET N-CH 75V 97A TO-220AB	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	190W (Tc)	N-Channel	-	75V	97A (Tc)	8.8 mOhm @ 58A, 10V	4V @ 100µA	130nC @ 10V	3540pF @ 50V	10V	±20V
	IRFB3507		获得报价	PDF RFQ	2,822 有现货	Infineon Technologies	MOSFET N-CH 75V 97A TO-220AB	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	190W (Tc)	N-Channel	-	75V	97A (Tc)	8.8 mOhm @ 58A, 10V	4V @ 100µA	130nC @ 10V	3540pF @ 50V	10V	±20V
	IRF3710LPBF	单位 $0.94	获得报价	PDF RFQ	817 有现货	Infineon Technologies	MOSFET N-CH 100V 57A TO-262	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	200W (Tc)	N-Channel	-	100V	57A (Tc)	23 mOhm @ 28A, 10V	4V @ 250µA	130nC @ 10V	3130pF @ 25V	10V	±20V
	IRF3710L		获得报价	PDF RFQ	941 有现货	Infineon Technologies	MOSFET N-CH 100V 57A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	200W (Tc)	N-Channel	-	100V	57A (Tc)	23 mOhm @ 28A, 10V	4V @ 250µA	130nC @ 10V	3130pF @ 25V	10V	±20V
	IRF1010EL		获得报价	PDF RFQ	2,609 有现货	Infineon Technologies	MOSFET N-CH 60V 84A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	200W (Tc)	N-Channel	-	60V	84A (Tc)	12 mOhm @ 50A, 10V	4V @ 250µA	130nC @ 10V	3210pF @ 25V	10V	±20V
	IRF3007PBF	单位 $1.14	获得报价	PDF RFQ	2,127 有现货	Infineon Technologies	MOSFET N-CH 75V 75A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	200W (Tc)	N-Channel	-	75V	75A (Tc)	12.6 mOhm @ 48A, 10V	4V @ 250µA	130nC @ 10V	3270pF @ 25V	10V	±20V
	IRF1010EPBF	单位 $1.53	获得报价	PDF RFQ	3,549 有现货	Infineon Technologies	MOSFET N-CH 60V 84A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	200W (Tc)	N-Channel	-	60V	84A (Tc)	12 mOhm @ 50A, 10V	4V @ 250µA	130nC @ 10V	3210pF @ 25V	10V	±20V
	AUIRF3007	单位 $1.33	获得报价	PDF RFQ	1,748 有现货	Infineon Technologies	MOSFET N-CH 75V 80A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	200W (Tc)	N-Channel	-	75V	75A (Tc)	12.6 mOhm @ 48A, 10V	4V @ 250µA	130nC @ 10V	3270pF @ 25V	10V	±20V
	IRF3007SPBF	单位 $1.33	获得报价	PDF RFQ	1,954 有现货	Infineon Technologies	MOSFET N-CH 75V 62A D2PAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	120W (Tc)	N-Channel	-	75V	62A (Tc)	12.6 mOhm @ 48A, 10V	4V @ 250µA	130nC @ 10V	3270pF @ 25V	10V	±20V
	IRF3710PBF	单位 $1.53	获得报价	PDF RFQ	3,379 有现货	Infineon Technologies	MOSFET N-CH 100V 57A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	200W (Tc)	N-Channel	-	100V	57A (Tc)	23 mOhm @ 28A, 10V	4V @ 250µA	130nC @ 10V	3130pF @ 25V	10V	±20V
	IRFI1010NPBF	单位 $1.89	获得报价	PDF RFQ	2,313 有现货	Infineon Technologies	MOSFET N-CH 55V 49A TO220FP	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak	58W (Tc)	N-Channel	-	55V	49A (Tc)	12 mOhm @ 26A, 10V	4V @ 250µA	130nC @ 10V	2900pF @ 25V	10V	±20V
	IRF3710SPBF	单位 $1.80	获得报价	PDF RFQ	1,703 有现货	Infineon Technologies	MOSFET N-CH 100V 57A D2PAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	200W (Tc)	N-Channel	-	100V	57A (Tc)	23 mOhm @ 28A, 10V	4V @ 250µA	130nC @ 10V	3130pF @ 25V	10V	±20V

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