- 供应商设备包 :
- 功耗(最大) :
- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 输入电容(Ciss)(最大)@Vds :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,294
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,008
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 8A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 125W (Tc) | N-Channel | Current Sensing | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 67nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,969
有现货
|
Infineon Technologies | MOSFET N-CH 60V 55A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 115W (Tc) | N-Channel | - | 60V | 55A (Tc) | 16.5 mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | 1812pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,877
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,643
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,783
有现货
|
Infineon Technologies | MOSFET N-CH 60V 55A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 115W (Tc) | N-Channel | - | 60V | 55A (Tc) | 16.5 mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | 1812pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,338
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,744
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V |