晶体管 - FET，MOSFET - 单电池 - 深圳市恒森鑫电子有限公司

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12 产品

图片	型号	价格	数量		库存	制造商	描述	系列	零件状态	包装材料	技术	工作温度	安装类型	包装/箱	供应商设备包	功耗（最大）	FET型	FET特性	漏极-源极电压（Vdss）	25°C时的电流-连续漏极（Id）	Rds开启（最大）@Id，Vgs	Vgs（th）（最大）@Id	栅极电荷（Qg）（最大）@Vgs	输入电容（Ciss）（最大）@Vds	驱动电压（最大Rds接通，最小Rds接通）	Vgs（最大值）
	IRFZ44ZL		获得报价	PDF RFQ	2,647 有现货	Infineon Technologies	MOSFET N-CH 55V 51A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	80W (Tc)	N-Channel	-	55V	51A (Tc)	13.9 mOhm @ 31A, 10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	10V	±20V
	IRFZ44ZS		获得报价	PDF RFQ	1,829 有现货	Infineon Technologies	MOSFET N-CH 55V 51A D2PAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	80W (Tc)	N-Channel	-	55V	51A (Tc)	13.9 mOhm @ 31A, 10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	10V	±20V
	IRFZ44Z		获得报价	PDF RFQ	2,660 有现货	Infineon Technologies	MOSFET N-CH 55V 51A TO-220AB	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	80W (Tc)	N-Channel	-	55V	51A (Tc)	13.9 mOhm @ 31A, 10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	10V	±20V
	IRC630PBF		获得报价	PDF RFQ	2,051 有现货	Vishay Siliconix	MOSFET N-CH 200V 9A TO-220-5	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5	74W (Tc)	N-Channel	Current Sensing	200V	9A (Tc)	400 mOhm @ 5.4A, 10V	4V @ 250µA	43nC @ 10V	800pF @ 25V	10V	±20V
	AUIRFZ44Z	单位 $0.92	获得报价	PDF RFQ	2,180 有现货	Infineon Technologies	MOSFET N-CH 55V 51A TO220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220	80W (Tc)	N-Channel	-	55V	51A (Tc)	13.9 mOhm @ 31A, 10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	10V	±20V
	IRFU18N15D		获得报价	PDF RFQ	2,928 有现货	Infineon Technologies	MOSFET N-CH 150V 18A I-PAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	110W (Tc)	N-Channel	-	150V	18A (Tc)	125 mOhm @ 11A, 10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	10V	±30V
	IRFR18N15D		获得报价	PDF RFQ	1,397 有现货	Infineon Technologies	MOSFET N-CH 150V 18A DPAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	110W (Tc)	N-Channel	-	150V	18A (Tc)	125 mOhm @ 11A, 10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	10V	±30V
	AUIRFZ44ZS		获得报价	PDF RFQ	3,485 有现货	Infineon Technologies	MOSFET N-CH 55V 51A D2PAK	HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	80W (Tc)	N-Channel	-	55V	51A (Tc)	13.9 mOhm @ 31A, 10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	10V	±20V
	IRFR18N15DPBF	单位 $0.65	获得报价	PDF RFQ	1,582 有现货	Infineon Technologies	MOSFET N-CH 150V 18A DPAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	110W (Tc)	N-Channel	-	150V	18A (Tc)	125 mOhm @ 11A, 10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	10V	±30V
	IRFZ44ZPBF	单位 $1.00	获得报价	PDF RFQ	1,069 有现货	Infineon Technologies	MOSFET N-CH 55V 51A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	80W (Tc)	N-Channel	-	55V	51A (Tc)	13.9 mOhm @ 31A, 10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	10V	±20V
	IRFZ44ZLPBF	单位 $1.93	获得报价	PDF RFQ	3,164 有现货	Infineon Technologies	MOSFET N-CH 55V 51A TO-262	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	80W (Tc)	N-Channel	-	55V	51A (Tc)	13.9 mOhm @ 31A, 10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	10V	±20V
	IRFZ44ZSPBF	单位 $1.72	获得报价	PDF RFQ	3,008 有现货	Infineon Technologies	MOSFET N-CH 55V 51A D2PAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	80W (Tc)	N-Channel	-	55V	51A (Tc)	13.9 mOhm @ 31A, 10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	10V	±20V

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