- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
14 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
627
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,860
有现货
|
Infineon Technologies | MOSFET N-CH 250V 2.2A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 250V | 2.2A (Ta) | 230 mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,954
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,458
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,443
有现货
|
Infineon Technologies | MOSFET N-CH 200V 13A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,321
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 4.5A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 74W (Tc) | N-Channel | Current Sensing | 500V | 4.5A (Tc) | 1.5 Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | 610pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,748
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 5.5A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 74W (Tc) | N-Channel | Current Sensing | 400V | 5.5A (Tc) | 1 Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | 700pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,158
有现货
|
Infineon Technologies | MOSFET N-CH 200V 13A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,724
有现货
|
Infineon Technologies | MOSFET N-CH 150V 5.1A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 150V | 5.1A (Ta) | 43 mOhm @ 3.1A, 10V | 5V @ 100µA | 38nC @ 10V | 1647pF @ 75V | 10V | ±20V | ||
|
|
获得报价 |
3,266
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A D-PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,635
有现货
|
Infineon Technologies | MOSFET N-CH 250V 2.2A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 250V | 2.2A (Ta) | 230 mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
614
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,366
有现货
|
Infineon Technologies | MOSFET N-CH 200V 13A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,806
有现货
|
Infineon Technologies | MOSFET N-CH 200V 25A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 144W (Tc) | N-Channel | - | 200V | 25A (Tc) | 72.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V |