- 功耗（最大） :
- Rds开启（最大）@Id，Vgs :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
1,591
有现货
|
Infineon Technologies | MOSFET N-CH 30V 87A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,624
有现货
|
Infineon Technologies | MOSFET N-CH 30V 87A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,365
有现货
|
Infineon Technologies | MOSFET N-CH 30V 87A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,805
有现货
|
Infineon Technologies | MOSFET N-CH 30V 87A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,117
有现货
|
Infineon Technologies | MOSFET N-CH 40V 87A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 143W (Tc) | N-Channel | - | 40V | 87A (Tc) | 9.2 mOhm @ 52A, 10V | 4V @ 100µA | 54nC @ 10V | 2150pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
665
有现货
|
Infineon Technologies | MOSFET N-CH 30V 87A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,554
有现货
|
Infineon Technologies | MOSFET N-CH 30V 87A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,464
有现货
|
Infineon Technologies | MOSFET N-CH 30V 87A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,424
有现货
|
Infineon Technologies | MOSFET N-CH 30V 87A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,430
有现货
|
Infineon Technologies | MOSFET N-CH 75V 89A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 75V | 87A (Tc) | 7.2 mOhm @ 52A, 10V | 3.7V @ 100µA | 126nC @ 10V | 4430pF @ 25V | 6V, 10V | ±20V |
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