- 供应商设备包 :
- 功耗(最大) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,955
有现货
|
Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 65W (Tc) | N-Channel | - | 30V | 65A (Tc) | 8.4 mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,749
有现货
|
Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 75W (Tc) | N-Channel | - | 30V | 65A (Tc) | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,791
有现货
|
Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 75W (Tc) | N-Channel | - | 30V | 65A (Tc) | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,968
有现货
|
Infineon Technologies | MOSFET N-CH 30V 65A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 75W (Tc) | N-Channel | - | 30V | 65A (Tc) | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,945
有现货
|
Infineon Technologies | MOSFET N-CH 30V 65A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 65W (Tc) | N-Channel | - | 30V | 65A (Tc) | 8.4 mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,830
有现货
|
Infineon Technologies | MOSFET N-CH 200V 65A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 330W (Tc) | N-Channel | - | 200V | 65A (Tc) | 24 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,523
有现货
|
Infineon Technologies | MOSFET N-CH 200V 65A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 330W (Tc) | N-Channel | - | 200V | 65A (Tc) | 25 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V |