- Vgs(th)(最大)@Id :
- 驱动电压(最大Rds接通,最小Rds接通) :
17 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,477
有现货
|
Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | |||
|
获得报价 |
1,749
有现货
|
Infineon Technologies | MOSFET N-CH 24V 180A TO-247AD | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AD | 380W (Tc) | N-Channel | - | 24V | 180A (Tc) | 1.6 mOhm @ 180A, 10V | 4V @ 250µA | 390nC @ 10V | 11220pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,419
有现货
|
Infineon Technologies | MOSFET N-CH 40V 180A TO220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 220W (Tc) | N-Channel | - | 40V | 180A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,470
有现货
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,776
有现货
|
Infineon Technologies | MOSFET N-CH 75V 180A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 330W (Tc) | N-Channel | - | 75V | 180A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | 10V | ±20V | |||
|
获得报价 |
3,692
有现货
|
Infineon Technologies | MOSFET N-CH 40V 180A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 180A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 150µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
获得报价 |
700
有现货
|
Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | |||
|
获得报价 |
2,051
有现货
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,588
有现货
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,371
有现货
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,396
有现货
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,764
有现货
|
Vishay Semiconductor Diodes Division | MOSFET N-CH 100V 180A SOT-227 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 480W (Tc) | N-Channel | - | 100V | 180A (Tc) | 6.5 mOhm @ 108A, 10V | 4V @ 250µA | 380nC @ 10V | 10700pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,627
有现货
|
Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 370W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | |||
|
获得报价 |
2,655
有现货
|
Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 375W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | |||
|
获得报价 |
3,893
有现货
|
Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 370W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | |||
|
获得报价 |
2,816
有现货
|
Infineon Technologies | MOSFET N-CH 100V 180A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 370W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | |||
|
获得报价 |
636
有现货
|
Infineon Technologies | MOSFET N-CH 40V 180A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 40V | 180A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V |