- 供应商设备包 :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
17 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,001
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,067
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | ||
|
|
获得报价 |
1,924
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | ||
|
|
|
获得报价 |
1,983
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | ||
|
|
|
获得报价 |
905
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,995
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
800
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,645
有现货
|
Infineon Technologies | MOSFET N-CH 30V 110A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 140W (Tc) | N-Channel | - | 30V | 110A (Tc) | 6.8 mOhm @ 15A, 10V | 3V @ 250µA | 50nC @ 4.5V | 2430pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,183
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,999
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,982
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,941
有现货
|
Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | ||
|
|
获得报价 |
2,621
有现货
|
Infineon Technologies | MOSFET N-CH 55V 98A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
768
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,106
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
955
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,605
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V |
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