晶体管 - FET，MOSFET - 单电池 - 深圳市恒森鑫电子有限公司

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15 产品

图片	型号	价格	数量		库存	制造商	描述	系列	零件状态	包装材料	技术	工作温度	安装类型	包装/箱	供应商设备包	功耗（最大）	FET型	FET特性	漏极-源极电压（Vdss）	25°C时的电流-连续漏极（Id）	Rds开启（最大）@Id，Vgs	Vgs（th）（最大）@Id	栅极电荷（Qg）（最大）@Vgs	输入电容（Ciss）（最大）@Vds	驱动电压（最大Rds接通，最小Rds接通）	Vgs（最大值）
	IRLZ24NL		获得报价	PDF RFQ	2,462 有现货	Infineon Technologies	MOSFET N-CH 55V 18A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 45W (Tc)	N-Channel	-	55V	18A (Tc)	60 mOhm @ 11A, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	4V, 10V	±16V
	IRF640NL		获得报价	PDF RFQ	1,294 有现货	Infineon Technologies	MOSFET N-CH 200V 18A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	150W (Tc)	N-Channel	-	200V	18A (Tc)	150 mOhm @ 11A, 10V	4V @ 250µA	67nC @ 10V	1160pF @ 25V	10V	±20V
	IRFU18N15D		获得报价	PDF RFQ	2,928 有现货	Infineon Technologies	MOSFET N-CH 150V 18A I-PAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	110W (Tc)	N-Channel	-	150V	18A (Tc)	125 mOhm @ 11A, 10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	10V	±30V
	IRFR18N15D		获得报价	PDF RFQ	1,397 有现货	Infineon Technologies	MOSFET N-CH 150V 18A DPAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	110W (Tc)	N-Channel	-	150V	18A (Tc)	125 mOhm @ 11A, 10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	10V	±30V
	IRLZ24NS		获得报价	PDF RFQ	997 有现货	Infineon Technologies	MOSFET N-CH 55V 18A D2PAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	N-Channel	-	55V	18A (Tc)	60 mOhm @ 11A, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	4V, 10V	±16V
	IRFR18N15DPBF	单位 $0.65	获得报价	PDF RFQ	1,582 有现货	Infineon Technologies	MOSFET N-CH 150V 18A DPAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	110W (Tc)	N-Channel	-	150V	18A (Tc)	125 mOhm @ 11A, 10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	10V	±30V
	IRLZ24NSPBF	单位 $0.65	获得报价	PDF RFQ	3,901 有现货	Infineon Technologies	MOSFET N-CH 55V 18A D2PAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	N-Channel	-	55V	18A (Tc)	60 mOhm @ 11A, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	4V, 10V	±16V
	IRC640PBF		获得报价	PDF RFQ	3,736 有现货	Vishay Siliconix	MOSFET N-CH 200V 18A TO-220-5	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5	125W (Tc)	N-Channel	Current Sensing	200V	18A (Tc)	180 mOhm @ 11A, 10V	4V @ 250µA	70nC @ 10V	1300pF @ 25V	10V	±20V
	IRLZ24NLPBF		获得报价	PDF RFQ	3,952 有现货	Infineon Technologies	MOSFET N-CH 55V 18A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 45W (Tc)	N-Channel	-	55V	18A (Tc)	60 mOhm @ 11A, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	4V, 10V	±16V
	IRF640NSPBF	单位 $1.44	获得报价	PDF RFQ	2,877 有现货	Infineon Technologies	MOSFET N-CH 200V 18A D2PAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	150W (Tc)	N-Channel	-	200V	18A (Tc)	150 mOhm @ 11A, 10V	4V @ 250µA	67nC @ 10V	1160pF @ 25V	10V	±20V
	64-0007		获得报价	PDF RFQ	2,643 有现货	Infineon Technologies	MOSFET N-CH 200V 18A TO-220AB	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	150W (Tc)	N-Channel	-	200V	18A (Tc)	150 mOhm @ 11A, 10V	4V @ 250µA	67nC @ 10V	1160pF @ 25V	10V	±20V
	IRLZ24NPBF	单位 $1.02	获得报价	PDF RFQ	661 有现货	Infineon Technologies	MOSFET N-CH 55V 18A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	45W (Tc)	N-Channel	-	55V	18A (Tc)	60 mOhm @ 11A, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	4V, 10V	±16V
	AUIRLZ24NS	单位 $0.72	获得报价	PDF RFQ	3,414 有现货	Infineon Technologies	MOSFET N-CH 55V AUTO	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	N-Channel	-	55V	18A (Tc)	60 mOhm @ 11A, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	4V, 10V	±16V
	IRF640NLPBF	单位 $1.82	获得报价	PDF RFQ	3,338 有现货	Infineon Technologies	MOSFET N-CH 200V 18A TO-262	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	150W (Tc)	N-Channel	-	200V	18A (Tc)	150 mOhm @ 11A, 10V	4V @ 250µA	67nC @ 10V	1160pF @ 25V	10V	±20V
	IRF640NPBF	单位 $0.99	获得报价	PDF RFQ	1,744 有现货	Infineon Technologies	MOSFET N-CH 200V 18A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	150W (Tc)	N-Channel	-	200V	18A (Tc)	150 mOhm @ 11A, 10V	4V @ 250µA	67nC @ 10V	1160pF @ 25V	10V	±20V

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