- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
14 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,809
有现货
|
Infineon Technologies | MOSFET N-CH 25V 57A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 48W (Tc) | N-Channel | - | 25V | 57A (Tc) | 8.7 mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 900pF @ 13V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,818
有现货
|
Infineon Technologies | MOSFET N-CH 250V 57A TO247AC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 360W (Tc) | N-Channel | - | 250V | 57A (Tc) | 33 mOhm @ 35A, 10V | 5V @ 250µA | 150nC @ 10V | 5860pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,982
有现货
|
Infineon Technologies | MOSFET N-CH 60V 57A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 92W (Tc) | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,400
有现货
|
Infineon Technologies | MOSFET N-CH 60V 57A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 92W (Tc) | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,473
有现货
|
Infineon Technologies | MOSFET N-CH 60V 57A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 92W (Tc) | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
获得报价 |
817
有现货
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
|
获得报价 |
941
有现货
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,094
有现货
|
Vishay Semiconductor Diodes Division | MOSFET N-CH 500V 57A SOT-227 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 625W (Tc) | N-Channel | - | 500V | 57A (Tc) | 80 mOhm @ 34A, 10V | 4V @ 250µA | 338nC @ 10V | 10000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,721
有现货
|
Infineon Technologies | MOSFET N-CH 60V 57A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 92W (Tc) | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,439
有现货
|
Infineon Technologies | MOSFET N-CH 25V 57A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 25V | 57A (Tc) | 8.7 mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 900pF @ 13V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,379
有现货
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,791
有现货
|
Infineon Technologies | MOSFET N-CH 60V 57A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 92W (Tc) | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,323
有现货
|
Infineon Technologies | MOSFET N-CH 60V 57A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 92W (Tc) | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,703
有现货
|
Infineon Technologies | MOSFET N-CH 100V 57A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V |