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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
16 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IRFR3711PBF
获得报价
RFQ
937
有现货
Infineon Technologies MOSFET N-CH 20V 100A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 120W (Tc) N-Channel - 20V 100A (Tc) 6.5 mOhm @ 15A, 10V 3V @ 250µA 44nC @ 4.5V 2980pF @ 10V 4.5V, 10V ±20V
IRF1104S
获得报价
RFQ
1,292
有现货
Infineon Technologies MOSFET N-CH 40V 100A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 2.4W (Ta), 170W (Tc) N-Channel - 40V 100A (Tc) 9 mOhm @ 60A, 10V 4V @ 250µA 93nC @ 10V 2900pF @ 25V 10V ±20V
IRFU3711PBF
获得报价
RFQ
1,868
有现货
Infineon Technologies MOSFET N-CH 20V 100A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 2.5W (Ta), 120W (Tc) N-Channel - 20V 100A (Tc) 6.5 mOhm @ 15A, 10V 3V @ 250µA 44nC @ 4.5V 2980pF @ 10V 4.5V, 10V ±20V
AUIRFU8405
单位
$0.95
获得报价
RFQ
3,680
有现货
Infineon Technologies MOSFET N-CH 40V 100A IPAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 163W (Tc) N-Channel - 40V 100A (Tc) 1.98 mOhm @ 90A, 10V 3.9V @ 100µA 155nC @ 10V 5171pF @ 25V 10V ±20V
IRF1104L
获得报价
RFQ
3,120
有现货
Infineon Technologies MOSFET N-CH 40V 100A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 2.4W (Ta), 170W (Tc) N-Channel - 40V 100A (Tc) 9 mOhm @ 60A, 10V 4V @ 250µA 93nC @ 10V 2900pF @ 25V 10V ±20V
IRLR6225PBF
单位
$0.56
获得报价
RFQ
3,102
有现货
Infineon Technologies MOSFET N-CH 20V 100A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 63W (Tc) N-Channel - 20V 100A (Tc) 4 mOhm @ 21A, 4.5V 1.1V @ 50µA 72nC @ 4.5V 3770pF @ 10V 2.5V, 4.5V ±12V
AUIRFR8405
获得报价
RFQ
3,005
有现货
Infineon Technologies MOSFET N-CH 40V 100A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 163W (Tc) N-Channel - 40V 100A (Tc) 1.98 mOhm @ 90A, 10V 3.9V @ 100µA 155nC @ 10V 5171pF @ 25V 10V ±20V
AUIRFR8403
获得报价
RFQ
3,630
有现货
Infineon Technologies MOSFET N-CH 40V 100A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 99W (Tc) N-Channel - 40V 100A (Tc) 3.1 mOhm @ 76A, 10V 3.9V @ 100µA 99nC @ 10V 3171pF @ 25V 10V ±20V
AUIRFR8401
获得报价
RFQ
2,545
有现货
Infineon Technologies MOSFET N-CH 40V 100A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 40V 100A (Tc) 4.25 mOhm @ 60A, 10V 3.9V @ 50µA 63nC @ 10V 2200pF @ 25V 10V ±20V
AUIRFU8401
单位
$0.68
获得报价
RFQ
3,295
有现货
Infineon Technologies MOSFET N-CH 40V 100A IPAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 79W (Tc) N-Channel - 40V 100A (Tc) 4.25 mOhm @ 60A, 10V 3.9V @ 500µA 63nC @ 10V 2200pF @ 25V 10V ±20V
IRF1104PBF
单位
$1.60
获得报价
RFQ
3,422
有现货
Infineon Technologies MOSFET N-CH 40V 100A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel - 40V 100A (Tc) 9 mOhm @ 60A, 10V 4V @ 250µA 93nC @ 10V 2900pF @ 25V 10V ±20V
IRF1407S
获得报价
RFQ
971
有现货
Infineon Technologies MOSFET N-CH 75V 100A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 200W (Tc) N-Channel - 75V 100A (Tc) 7.8 mOhm @ 78A, 10V 4V @ 250µA 250nC @ 10V 5600pF @ 25V 10V ±20V
IRF1407L
获得报价
RFQ
1,493
有现货
Infineon Technologies MOSFET N-CH 75V 100A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 200W (Tc) N-Channel - 75V 100A (Tc) 7.8 mOhm @ 78A, 10V 4V @ 250µA 250nC @ 10V 5600pF @ 25V 10V ±20V
IRFR3711
获得报价
RFQ
1,023
有现货
Infineon Technologies MOSFET N-CH 20V 100A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 120W (Tc) N-Channel - 20V 100A (Tc) 6.5 mOhm @ 15A, 10V 3V @ 250µA 44nC @ 4.5V 2980pF @ 10V 4.5V, 10V ±20V
IRFU3711
获得报价
RFQ
1,805
有现货
Infineon Technologies MOSFET N-CH 20V 100A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 2.5W (Ta), 120W (Tc) N-Channel - 20V 100A (Tc) 6.5 mOhm @ 15A, 10V 3V @ 250µA 44nC @ 4.5V 2980pF @ 10V 4.5V, 10V ±20V
AUIRFU8403
单位
$0.75
获得报价
RFQ
3,126
有现货
Infineon Technologies MOSFET N-CH 40V 100A IPAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 99W (Tc) N-Channel - 40V 100A (Tc) 3.1 mOhm @ 76A, 10V 3.9V @ 100µA 99nC @ 10V 3171pF @ 25V 10V ±20V
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