- 功耗（最大） :
-
- 110W (Tc) (4)
- 125W (Tc) (1)
- 144W (Tc) (6)
- 150W (Tc) (5)
- 2.4W (Ta), 330W (Tc) (2)
- 2.5W (Ta) (7)
- 214W (Tc) (1)
- 3.1W (Ta), 200W (Tc) (3)
- 3.8W (Ta), 140W (Tc) (5)
- 3.8W (Ta), 170W (Tc) (6)
- 3.8W (Ta), 300W (Tc) (2)
- 300W (Tc) (1)
- 330W (Tc) (4)
- 341W (Tc) (1)
- 375W (Tc) (3)
- 380W (Tc) (1)
- 3W (Ta), 140W (Tc) (1)
- 43W (Tc) (4)
- 46W (Tc) (1)
- 520W (Tc) (1)
- 650W (Tc) (1)
- 74W (Tc) (1)
- 82W (Tc) (5)
- 86W (Tc) (2)
- FET特性 :
- 25°C时的电流-连续漏极（Id） :
-
- 1.2A (Ta) (2)
- 130A (Tc) (1)
- 13A (Tc) (3)
- 16A (Tc) (5)
- 17A (Tc) (2)
- 18A (Tc) (6)
- 2.5A (Ta) (2)
- 24A (Tc) (11)
- 25A (Tc) (1)
- 26A (Tc) (1)
- 3.7A (Ta) (3)
- 30A (Tc) (1)
- 31A (Tc) (3)
- 43A (Tc) (3)
- 44A (Tc) (2)
- 50A (Tc) (1)
- 56A (Tc) (1)
- 5A (Ta) (1)
- 5A (Tc) (3)
- 62A (Tc) (2)
- 65A (Tc) (2)
- 72A (Tc) (2)
- 75A (Tc) (1)
- 76A (Tc) (1)
- 9.3A (Tc) (5)
- 9.4A (Tc) (2)
- 98A (Tc) (1)
- 9A (Tc) (1)
- Rds开启（最大）@Id，Vgs :
-
- 100 mOhm @ 14A, 10V (6)
- 150 mOhm @ 11A, 10V (5)
- 165 mOhm @ 10A, 10V (2)
- 170 mOhm @ 1.5A, 10V (2)
- 170 mOhm @ 9.8A, 10V (5)
- 180 mOhm @ 11A, 10V (1)
- 20 mOhm @ 44A, 10V (1)
- 21 mOhm @ 44A, 10V (1)
- 22 mOhm @ 44A, 10V (2)
- 23 mOhm @ 59A, 10V (1)
- 235 mOhm @ 8A, 10V (3)
- 24 mOhm @ 46A, 10V (1)
- 25 mOhm @ 17A, 10V (1)
- 25 mOhm @ 46A, 10V (1)
- 26 mOhm @ 46A, 10V (2)
- 300 mOhm @ 5.4A, 10V (5)
- 380 mOhm @ 5.6A, 10V (2)
- 40 mOhm @ 28A, 10V (1)
- 40 mOhm @ 34A, 10V (1)
- 400 mOhm @ 5.4A, 10V (1)
- 54 mOhm @ 26A, 10V (3)
- 55 mOhm @ 26A, 10V (2)
- 600 mOhm @ 2.9A, 10V (4)
- 72.5 mOhm @ 15A, 10V (1)
- 730 mOhm @ 720mA, 10V (2)
- 75 mOhm @ 18A, 10V (1)
- 77.5 mOhm @ 15A, 10V (2)
- 78 mOhm @ 15A, 10V (3)
- 78 mOhm @ 2.2A, 10V (1)
- 79 mOhm @ 2.2A, 10V (2)
- 82 mOhm @ 18A, 10V (3)
- 9.7 mOhm @ 81A, 10V (1)
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
-
- 107nC @ 10V (2)
- 110nC @ 10V (2)
- 123nC @ 10V (1)
- 140nC @ 10V (2)
- 14nC @ 10V (2)
- 150nC @ 10V (4)
- 220nC @ 10V (1)
- 234nC @ 10V (1)
- 23nC @ 10V (4)
- 240nC @ 10V (1)
- 241nC @ 10V (1)
- 27nC @ 10V (2)
- 35nC @ 10V (5)
- 38nC @ 10V (9)
- 39nC @ 10V (2)
- 41nC @ 10V (2)
- 43nC @ 10V (1)
- 44nC @ 10V (1)
- 50nC @ 10V (5)
- 59nC @ 10V (2)
- 67nC @ 10V (5)
- 70nC @ 10V (1)
- 86nC @ 10V (6)
- 91nC @ 10V (3)
- 98nC @ 10V (4)
- 输入电容（Ciss）（最大）@Vds :
-
- 10720pF @ 50V (1)
- 1100pF @ 25V (5)
- 1160pF @ 25V (5)
- 1300pF @ 25V (1)
- 1710pF @ 50V (6)
- 1750pF @ 100V (1)
- 1820pF @ 25V (2)
- 1960pF @ 25V (6)
- 2159pF @ 25V (1)
- 2370pF @ 25V (3)
- 280pF @ 25V (2)
- 2900pF @ 25V (3)
- 300pF @ 25V (4)
- 3430pF @ 25V (2)
- 4057pF @ 25V (1)
- 4220pF @ 25V (1)
- 4600pF @ 25V (5)
- 5380pF @ 50V (4)
- 560pF @ 25V (2)
- 575pF @ 25V (5)
- 6080pF @ 25V (1)
- 800pF @ 25V (1)
- 830pF @ 25V (3)
- 910pF @ 25V (2)
- 940pF @ 25V (2)
69 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,580
有现货
|
Infineon Technologies | MOSFET N CH 200V 3.7A 8-SO | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 78 mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,172
有现货
|
Infineon Technologies | MOSFET N-CH 200V 62A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 330W (Tc) | N-Channel | - | 200V | 62A (Tc) | 26 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
627
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
1,787
有现货
|
Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | ||
;;3.jpg)
|
|
获得报价 |
3,954
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
2,458
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
2,478
有现货
|
Infineon Technologies | MOSFET N-CH 200V 3.7A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 79 mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59nC @ 10V | 1820pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,443
有现货
|
Infineon Technologies | MOSFET N-CH 200V 13A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,147
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,051
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 9A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 74W (Tc) | N-Channel | Current Sensing | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,641
有现货
|
Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | - | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,674
有现货
|
Infineon Technologies | MOSFET N-CH 200V 3.7A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 79 mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59nC @ 10V | 1820pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,929
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,101
有现货
|
Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | - | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,294
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
612
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,364
有现货
|
Infineon Technologies | MOSFET N-CH 200V 16A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 140W (Tc) | N-Channel | - | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,812
有现货
|
Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,730
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,801
有现货
|
Infineon Technologies | MOSFET N-CH 200V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
670
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,032
有现货
|
Infineon Technologies | MOSFET N-CH 200V 16A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | - | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,957
有现货
|
Infineon Technologies | MOSFET N-CH 200V 44A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 2.4W (Ta), 330W (Tc) | N-Channel | - | 200V | 44A (Tc) | 55 mOhm @ 26A, 10V | 5.5V @ 250µA | 140nC @ 10V | 3430pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
940
有现货
|
Infineon Technologies | MOSFET N-CH 200V 5A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,158
有现货
|
Infineon Technologies | MOSFET N-CH 200V 13A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,211
有现货
|
Infineon Technologies | MOSFET N-CH 200V 43A TO-262-3 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | - | - | ||
|
|
|
获得报价 |
3,077
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,272
有现货
|
Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | - | 200V | 5A (Ta) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,736
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 18A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 125W (Tc) | N-Channel | Current Sensing | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,769
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V |
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