- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 驱动电压（最大Rds接通，最小Rds接通） :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
3,219
有现货
|
Infineon Technologies | MOSFET N-CH 80V 30A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 120W (Tc) | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V | ||
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|
|
获得报价 |
954
有现货
|
Infineon Technologies | MOSFET N-CH 80V 70A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3.8W (Ta), 140W (Tc) | N-Channel | - | 80V | 70A (Tc) | 14 mOhm @ 18A, 10V | 5.5V @ 250µA | 94nC @ 10V | 3510pF @ 25V | 10V | ±20V | ||
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获得报价 |
1,521
有现货
|
Infineon Technologies | MOSFET N-CH 80V 38A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 80V | 38A (Tc) | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
3,664
有现货
|
Infineon Technologies | MOSFET N-CH 80V 38A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 80V | 38A (Tc) | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
2,493
有现货
|
Infineon Technologies | MOSFET N-CH 80V 10A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 80V | 10A (Ta) | 13.4 mOhm @ 10A, 10V | 4.9V @ 100µA | 41nC @ 10V | 1620pF @ 25V | 10V | ±20V | ||
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获得报价 |
785
有现货
|
Infineon Technologies | MOSFET N-CH 80V 95A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 210W (Tc) | N-Channel | - | 80V | 95A (Tc) | 10 mOhm @ 57A, 10V | 5.5V @ 250µA | 140nC @ 10V | 5450pF @ 25V | 10V | ±20V | ||
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获得报价 |
3,442
有现货
|
Infineon Technologies | MOSFET N-CH 80V 70A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 3.8W (Ta), 140W (Tc) | N-Channel | - | 80V | 70A (Tc) | 14 mOhm @ 18A, 10V | 5.5V @ 250µA | 94nC @ 10V | 3510pF @ 25V | 10V | ±20V | ||
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获得报价 |
765
有现货
|
Infineon Technologies | MOSFET N-CH 80V 6.3A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 80V | 6.3A (Ta) | 29 mOhm @ 3.8A, 10V | 4V @ 250µA | 57nC @ 10V | 1680pF @ 25V | 10V | ±20V | ||
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获得报价 |
1,884
有现货
|
Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | ||
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获得报价 |
903
有现货
|
Infineon Technologies | MOSFET N-CH 80V 30A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V |
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