- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
744
有现货
|
Infineon Technologies | MOSFET N-CH 150V 34A TO-220AB FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 46W (Tc) | N-Channel | - | 150V | 34A (Tc) | 16 mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | 4560pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,856
有现货
|
Infineon Technologies | MOSFET N-CH 200V 26A TO-220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 46W (Tc) | N-Channel | - | 200V | 26A (Tc) | 25 mOhm @ 17A, 10V | 5V @ 250µA | 110nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,288
有现货
|
Infineon Technologies | MOSFET N-CH 150V 34A TO-220AB FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 46W (Tc) | N-Channel | - | 150V | 34A (Tc) | 16 mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | 4440pF @ 50V | 10V | ±30V | |||
|
获得报价 |
1,098
有现货
|
Infineon Technologies | MOSFET N-CH 250V 19A TO-220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 46W (Tc) | N-Channel | - | 250V | 19A (Tc) | 46 mOhm @ 11A, 10V | 5V @ 250µA | 110nC @ 10V | 4480pF @ 25V | 10V | ±30V |