- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,990
有现货
|
Infineon Technologies | MOSFET N-CH 40V 42A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 143W (Tc) | N-Channel | - | 40V | 56A (Tc) | 4.9 mOhm @ 56A, 10V | 2.5V @ 100µA | 53nC @ 4.5V | 3617pF @ 25V | 10V | ±16V | ||
|
|
获得报价 |
2,458
有现货
|
Infineon Technologies | MOSFET N-CH 60V 99A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
808
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,117
有现货
|
Infineon Technologies | MOSFET N-CH 40V 87A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 143W (Tc) | N-Channel | - | 40V | 87A (Tc) | 9.2 mOhm @ 52A, 10V | 4V @ 100µA | 54nC @ 10V | 2150pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,945
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,789
有现货
|
Infineon Technologies | MOSFET N-CH 60V 50A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 143W (Tc) | N-Channel | - | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,257
有现货
|
Infineon Technologies | MOSFET N-CH 60V 50A D-PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V |