- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,754
有现货
|
Infineon Technologies | MOSFET N-CH 30V 55A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 30V | 55A (Tc) | 19 mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
3,712
有现货
|
Infineon Technologies | MOSFET N-CH 30V 55A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 107W (Tc) | N-Channel | - | 30V | 55A (Tc) | 19 mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
1,315
有现货
|
Infineon Technologies | MOSFET N-CH 55V 44A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 107W (Tc) | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,345
有现货
|
Infineon Technologies | MOSFET N-CH 30V 55A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 30V | 55A (Tc) | 19 mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
3,654
有现货
|
Infineon Technologies | MOSFET N-CH 55V 44A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,457
有现货
|
Infineon Technologies | MOSFET N-CH 55V 44A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 107W (Tc) | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,670
有现货
|
Infineon Technologies | MOSFET N-CH 30V 55A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 107W (Tc) | N-Channel | - | 30V | 55A (Tc) | 19 mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
2,272
有现货
|
Infineon Technologies | MOSFET N-CH 55V 53A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 107W (Tc) | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,866
有现货
|
Infineon Technologies | MOSFET N-CH 55V 44A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V |