- 供应商设备包 :
- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
852
有现货
|
Infineon Technologies | MOSFET N-CH 75V 76A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 75V | 76A (Tc) | 8.4 mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
3,736
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 18A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 125W (Tc) | N-Channel | Current Sensing | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,008
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 8A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 125W (Tc) | N-Channel | Current Sensing | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 67nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,277
有现货
|
Vishay Siliconix | MOSFET N-CH 250V 14A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 125W (Tc) | N-Channel | Current Sensing | 250V | 14A (Tc) | 280 mOhm @ 8.4A, 10V | 4V @ 250µA | 65nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,235
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 10A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 125W (Tc) | N-Channel | Current Sensing | 400V | 10A (Tc) | 550 mOhm @ 6A, 10V | 4V @ 250µA | 66nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,937
有现货
|
Infineon Technologies | MOSFET N-CH 30V 184A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 125W (Tc) | N-Channel | - | 30V | 130A (Tc) | 2.4 mOhm @ 68A, 10V | 2.2V @ 100µA | 60nC @ 4.5V | 5050pF @ 15V | 4.5V, 10V | ±20V |