- FET特性 :
- 25°C时的电流-连续漏极（Id） :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
750
有现货
|
Infineon Technologies | MOSFET N-CH 500V 12A TO-3-3 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AA (TO-3) | 150W (Tc) | N-Channel | - | 500V | 12A (Tc) | 500 mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | 2700pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,294
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,301
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 28A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 150W (Tc) | N-Channel | Current Sensing | 100V | 28A (Tc) | 77 mOhm @ 17A, 10V | 4V @ 250µA | 69nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,977
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 50A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 150W (Tc) | N-Channel | Current Sensing | 60V | 50A (Tc) | 28 mOhm @ 31A, 10V | 4V @ 250µA | 95nC @ 10V | 2500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
602
有现货
|
Infineon Technologies | MOSFET N-CH 60V 72A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | - | 60V | 72A (Tc) | 12 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,877
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,643
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,933
有现货
|
Infineon Technologies | MOSFET N-CH 60V 72A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 60V | 72A (Tc) | 12 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,338
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,744
有现货
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V |
粤ICP备2022113175号-1