- FET型 :
- Rds开启(最大)@Id,Vgs :
-
- 1.5 Ohm @ 1.5A, 10V (2)
- 1.8 Ohm @ 1.9A, 10V (2)
- 110 mOhm @ 6.8A, 10V (1)
- 175 mOhm @ 5.4A, 10V (1)
- 175 mOhm @ 6.6A, 10V (1)
- 175 mOhm @ 7.2A, 10V (3)
- 270 mOhm @ 5.9A, 10V (1)
- 4.4 Ohm @ 1.2A, 10V (2)
- 4.4 Ohm @ 1.3A, 10V (4)
- 4.4 Ohm @ 190mA, 10V (1)
- 4.4 Ohm @ 1A, 10V (1)
- 480 mOhm @ 3.9A, 10V (3)
- 480 mOhm @ 4A, 10V (4)
- 70 mOhm @ 19A, 10V (5)
- 800 mOhm @ 3A, 10V (1)
- Vgs(th)(最大)@Id :
- 驱动电压(最大Rds接通,最小Rds接通) :
32 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
644
有现货
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,449
有现货
|
Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | - | P-Channel | - | 100V | 6.6A (Ta) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,305
有现货
|
Infineon Technologies | MOSFET P-CH 100V 6.8A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,399
有现货
|
Infineon Technologies | MOSFET P-CH 55V 9.5A TO-220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 29W (Tc) | P-Channel | - | 55V | 9.5A (Tc) | 175 mOhm @ 5.4A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
921
有现货
|
STMicroelectronics | MOSFET N-CH 200V 6A TO-220 | PowerMESH™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 70W (Tc) | N-Channel | - | 200V | 6A (Tc) | 800 mOhm @ 3A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,228
有现货
|
ON Semiconductor | MOSFET N-CH 55V 19A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 55W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 19A, 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,353
有现货
|
ON Semiconductor | MOSFET N-CH 55V 19A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 55W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 19A, 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,346
有现货
|
ON Semiconductor | MOSFET N-CH 55V 19A DPAK | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 55W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 19A, 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,584
有现货
|
ON Semiconductor | MOSFET N-CH 55V 19A IPAK | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 55W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 19A, 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,288
有现货
|
ON Semiconductor | MOSFET N-CH 55V 19A DPAK | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 19A, 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,340
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 2.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.1W (Ta), 50W (Tc) | N-Channel | - | 600V | 2.2A (Tc) | 4.4 Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,736
有现货
|
Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,479
有现货
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
898
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 2.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 50W (Tc) | N-Channel | - | 600V | 2.2A (Tc) | 4.4 Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
995
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 2A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.4 Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,165
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,524
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 2.2A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 50W (Tc) | N-Channel | - | 600V | 2.2A (Tc) | 4.4 Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,205
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 2.2A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 50W (Tc) | N-Channel | - | 600V | 2.2A (Tc) | 4.4 Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,686
有现货
|
Vishay Siliconix | MOSFET P-CH 200V 3.5A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 40W (Tc) | P-Channel | - | 200V | 3.5A (Tc) | 1.5 Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,655
有现货
|
ON Semiconductor | MOSFET N-CH 60V 13.6A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 45W (Tc) | N-Channel | - | 60V | 13.6A (Tc) | 110 mOhm @ 6.8A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | 5V, 10V | ±20V | |||
|
获得报价 |
2,243
有现货
|
Infineon Technologies | MOSFET P-CH 100V 6.6A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,609
有现货
|
Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,944
有现货
|
ON Semiconductor | MOSFET N-CH 100V 8.4A TO-252AA | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 50W (Tc) | N-Channel | - | 100V | 8.4A (Tc) | 270 mOhm @ 5.9A, 10V | 4V @ 250µA | 15nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,492
有现货
|
Infineon Technologies | MOSFET P-CH 100V 6.6A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,126
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 3.1A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | - | 400V | 3.1A (Tc) | 1.8 Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,953
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 2A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.4 Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,613
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 3.1A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | - | 400V | 3.1A (Tc) | 1.8 Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,276
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 1.7A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | - | 600V | 1.7A (Tc) | 4.4 Ohm @ 1A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,003
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 320MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 600V | 320mA (Ta) | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,595
有现货
|
Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V |