- 系列 :
- 零件状态 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,060
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
获得报价 |
1,730
有现货
|
ON Semiconductor | MOSFET P-CH 200V 3.7A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 45W (Tc) | P-Channel | - | 200V | 3.7A (Tc) | 1.4 Ohm @ 1.85A, 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,225
有现货
|
ON Semiconductor | MOSFET N-CH 200V 1.13A SOT-223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2W (Tc) | N-Channel | - | 200V | 1.13A (Ta) | 800 mOhm @ 570mA, 5V | - | 15nC @ 5V | 430pF @ 25V | 5V | ±20V | ||
|
|
获得报价 |
2,352
有现货
|
Rohm Semiconductor | MOSFET N-CH 600V 9A LPT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (D2PAK) | 40W (Tc) | N-Channel | - | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 4V @ 1mA | 23nC @ 10V | 430pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
771
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
获得报价 |
2,697
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V |