- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 驱动电压(最大Rds接通,最小Rds接通) :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
3,464
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 5A PW-MOLD | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 20W (Tc) | P-Channel | 60V | 5A (Ta) | 190 mOhm @ 2.5A, 10V | 2V @ 1mA | 22nC @ 10V | 630pF @ 10V | 4V, 10V | ±20V | ||
|
|
获得报价 |
2,047
有现货
|
ON Semiconductor | MOSFET N-CH 20V 4.5A MCPH3 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SC-70FL/MCPH3 | 1W (Ta) | N-Channel | 20V | 4.5A (Ta) | 40 mOhm @ 2A, 2.5V | 800mV @ 1mA | 11nC @ 2.5V | 630pF @ 10V | 0.9V, 2.5V | ±5V | ||
|
|
获得报价 |
1,130
有现货
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 20V 9A 8DFN | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (3x3) | 3.1W (Ta), 16.7W (Tc) | N-Channel | 20V | 9A (Ta), 23A (Tc) | 19 mOhm @ 9A, 10V | 1.1V @ 250µA | 15nC @ 10V | 630pF @ 10V | 1.8V, 10V | ±12V | ||
|
|
获得报价 |
768
有现货
|
Rohm Semiconductor | MOSFET P-CH 20V 2.5A TSMT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Ta) | P-Channel | 20V | 2.5A (Ta) | 95 mOhm @ 2.5A, 4.5V | 2V @ 1mA | 7nC @ 4.5V | 630pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
获得报价 |
3,305
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
2,908
有现货
|
Vishay Siliconix | MOSFET N-CH 20V 3.3A MICRO | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA | 4-Micro Foot (1x1) | 780mW (Ta) | N-Channel | 20V | - | 44 mOhm @ 1.5A, 4.5V | 900mV @ 250µA | 18nC @ 8V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
3,375
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
3,095
有现货
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 20V 6A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3L | 1.4W (Ta) | N-Channel | 20V | 6A (Ta) | 24 mOhm @ 6A, 10V | 1V @ 1mA | 8.8nC @ 4.5V | 630pF @ 10V | 1.8V, 10V | ±12V |