- 驱动电压（最大Rds接通，最小Rds接通） :
- Vgs（最大值） :
8 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
2,326
有现货
|
ON Semiconductor | MOSFET N-CH 40V 41A DFN5 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.2W (Ta), 140W (Tc) | N-Channel | 40V | 41A (Ta), 270A (Tc) | 1.1 mOhm @ 50A, 10V | 2V @ 250µA | 89nC @ 10V | 5700pF @ 20V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
1,543
有现货
|
Vishay Siliconix | MOSFET N-CHAN 40V POWERPAK 1212- | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 5W (Ta), 65.7W (Tc) | N-Channel | 40V | 37.5A (Ta), 60A (Tc) | 1.98 mOhm @ 10A, 10V | 2.4V @ 250µA | 89nC @ 10V | 4270pF @ 20V | 4.5V, 10V | +20V, -16V | ||
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|
获得报价 |
2,014
有现货
|
Infineon Technologies | MOSFET N-CH 60V 30A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 156W (Tc) | N-Channel | 60V | 30A (Ta), 100A (Tc) | 1.45 mOhm @ 50A, 10V | 2.8V @ 120µA | 89nC @ 10V | 6500pF @ 30V | 6V, 10V | ±20V | ||
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|
获得报价 |
3,268
有现货
|
Infineon Technologies | MOSFET N-CH 150V 51A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 230W (Tc) | N-Channel | 150V | 51A (Tc) | 32 mOhm @ 36A, 10V | 5V @ 250µA | 89nC @ 10V | 2770pF @ 25V | 10V | ±30V | ||
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|
获得报价 |
1,461
有现货
|
Infineon Technologies | MOSFET N-CH 40V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | 40V | 42A (Tc) | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
706
有现货
|
Vishay Siliconix | MOSFET N-CHAN 40V | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | 40V | 37.6A (Ta), 133A (Tc) | 1.96 mOhm @ 10A, 10V | 2.4V @ 250µA | 89nC @ 10V | 4270pF @ 20V | 4.5V, 10V | +20V, -16V | ||
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获得报价 |
2,903
有现货
|
Infineon Technologies | MOSFET N-CH 250V 64A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | 250V | 64A (Tc) | 20 mOhm @ 64A, 10V | 4V @ 270µA | 89nC @ 10V | 7000pF @ 25V | 10V | ±20V | ||
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获得报价 |
1,961
有现货
|
Infineon Technologies | MOSFET N-CH 75V 56A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 99W (Tc) | N-Channel | 75V | 56A (Tc) | 11.2 mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | 3107pF @ 25V | 6V, 10V | ±20V |
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