- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
3,215
有现货
|
Infineon Technologies | MOSFET N-CH 30V 3.2A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | N-Channel | 30V | 3.2A (Ta) | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,898
有现货
|
Vishay Siliconix | MOSFET N-CH 30V 4.5A SOT-23 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.25W (Ta), 1.66W (Tc) | N-Channel | 30V | 4.5A (Tc) | 50 mOhm @ 3.9A, 10V | 3V @ 250µA | 9.6nC @ 10V | 350pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,069
有现货
|
Diodes Incorporated | MOSFET N-CH 30V ENHANCE SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | 30V | 3.4A (Ta), 4.7A (Tc) | 110 mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,059
有现货
|
Infineon Technologies | MOSFET N-CH 30V 3.2A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | N-Channel | 30V | 3.2A (Ta) | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,558
有现货
|
Vishay Siliconix | MOSFET N-CH 30V 4.5A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.25W (Ta), 1.66W (Tc) | N-Channel | 30V | 4.5A (Tc) | 50 mOhm @ 3.9A, 10V | 3V @ 250µA | 9.6nC @ 10V | 350pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,396
有现货
|
ON Semiconductor | MOSFET N-CH 800V 2A DPAK | SuperFET® II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 32W (Tc) | N-Channel | 800V | 2A (Tc) | 3.4 Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6nC @ 10V | 400pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
2,306
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 36.8W (Tc) | N-Channel | 600V | 4A (Tc) | 900 mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6nC @ 10V | 315pF @ 100V | 10V | ±30V |