- 工作温度 :
- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,463
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 80V 34A SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 80V | 34A (Tc) | 8 mOhm @ 17A, 10V | 4V @ 500µA | 35nC @ 10V | 3000pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
661
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | ||
|
|
获得报价 |
725
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V | ||
|
|
获得报价 |
1,926
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 32A 8-SOP ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 63W (Tc) | N-Channel | - | 60V | 32A (Ta) | 4.6 mOhm @ 16A, 10V | 4V @ 500µA | 49nC @ 10V | 3965pF @ 30V | 6.5V, 10V | ±20V | ||
|
|
获得报价 |
3,197
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 32A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 10V | ±20V |