- Rds开启（最大）@Id，Vgs :
-
- 1.2 Ohm @ 540mA, 10V (2)
- 100 mOhm @ 14A, 10V (1)
- 125 mOhm @ 11A, 10V (1)
- 165 mOhm @ 10A, 10V (1)
- 170 mOhm @ 1.5A, 10V (1)
- 2.2 Ohm @ 360mA, 10V (1)
- 230 mOhm @ 1.3A, 10V (1)
- 235 mOhm @ 8A, 10V (1)
- 26 mOhm @ 4.1A, 10V (1)
- 280 mOhm @ 1.14A, 10V (1)
- 380 mOhm @ 5.6A, 10V (1)
- 6 Ohm @ 1.25A, 10V (1)
- 60 mOhm @ 2.7A, 10V (2)
- 730 mOhm @ 720mA, 10V (1)
- 8.5 Ohm @ 900mA, 10V (1)
- 82 mOhm @ 18A, 10V (1)
- 90 mOhm @ 14A, 10V (1)
- 90 mOhm @ 2.2A, 10V (1)
20 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,807
有现货
|
Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,950
有现货
|
Infineon Technologies | MOSFET N-CH 250V 2.2A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 250V | 2.2A (Ta) | 230 mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,202
有现货
|
Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | ||
.jpg)
|
|
获得报价 |
3,757
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CH 1000V 1.85A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 77W (Tc) | N-Channel | - | 1000V | 1.85A (Tc) | 8.5 Ohm @ 900mA, 10V | 5.5V @ 250µA | 17nC @ 10V | 625pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,814
有现货
|
Infineon Technologies | MOSFET N-CH 150V 18A DPAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 150V | 18A (Tc) | 125 mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | 900pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,168
有现货
|
Infineon Technologies | MOSFET N-CH 100V 6.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 6.9A (Ta) | 26 mOhm @ 4.1A, 10V | 5.5V @ 250µA | 61nC @ 10V | 3180pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
918
有现货
|
Infineon Technologies | MOSFET N-CH 150V 0.9A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | N-Channel | - | 150V | 900mA (Ta) | 1.2 Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | 88pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,864
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,356
有现货
|
Infineon Technologies | MOSFET N-CH 150V 23A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 136W (Tc) | N-Channel | - | 150V | 23A (Tc) | 90 mOhm @ 14A, 10V | 5.5V @ 250µA | 56nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,332
有现货
|
Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,914
有现货
|
Infineon Technologies | MOSFET N-CH 150V 1.9A 8SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 150V | 1.9A (Ta) | 280 mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | 330pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,183
有现货
|
Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,072
有现货
|
Infineon Technologies | MOSFET N-CH 200V 2.5A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 2.5A (Ta) | 170 mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,381
有现货
|
Infineon Technologies | MOSFET N-CH 200V 13A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,252
有现货
|
Infineon Technologies | MOSFET N-CH 150V 3.6A 8SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 150V | 3.6A (Ta) | 90 mOhm @ 2.2A, 10V | 5.5V @ 250µA | 41nC @ 10V | 990pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,631
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,753
有现货
|
Infineon Technologies | MOSFET N-CH 200V 600MA 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | N-Channel | - | 200V | 600mA (Ta) | 2.2 Ohm @ 360mA, 10V | 5.5V @ 250µA | 3.9nC @ 10V | 88pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
859
有现货
|
Infineon Technologies | MOSFET N-CH 150V 0.9A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | N-Channel | - | 150V | 900mA (Ta) | 1.2 Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | 88pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,769
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CH 1000V 2.5A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 99W (Tc) | N-Channel | - | 1000V | 2.5A (Tc) | 6 Ohm @ 1.25A, 10V | 5.5V @ 250µA | 19nC @ 10V | 664pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,350
有现货
|
Infineon Technologies | MOSFET N-CH 200V 17A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3W (Ta), 140W (Tc) | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V |
粤ICP备2022113175号-1