- 零件状态 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
967
有现货
|
Taiwan Semiconductor Corporation | MOSFET P-CH 40V 51A 8PDFN | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 69W (Tc) | P-Channel | - | 40V | 51A (Tc) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 48nC @ 10V | 2712pF @ 20V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,517
有现货
|
Diodes Incorporated | MOSFET N-CHA 60V 9.2A SO8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 60V | 9.2A (Ta) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 18.9nC @ 30V | 1103pF @ 30V | 4.5V, 10V | ±16V | |||
|
获得报价 |
2,314
有现货
|
Diodes Incorporated | MOSFET BVDSS: 41V 60V POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.16W (Ta) | N-Channel | - | 60V | 10.6A (Ta), 31A (Tc) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 18.9nC @ 10V | 1103pF @ 30V | 4.5V, 10V | ±16V | |||
|
获得报价 |
678
有现货
|
Vishay Siliconix | MOSFET N-CHANNEL 30V 11.9A 8SO | SkyFET®, TrenchFET® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 4.1W (Tc) | N-Channel | - | 30V | 11.9A (Tc) | 16 mOhm @ 10A, 10V | 2.3V @ 1mA | 17.5nC @ 10V | 521pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,037
有现货
|
Diodes Incorporated | MOSFET N-CH 60V 10.6A POWERDI | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.23W (Ta) | N-Channel | - | 60V | 10.6A (Ta) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 17nC @ 10V | 864pF @ 30V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,325
有现货
|
Diodes Incorporated | MOSFET N-CH 60V 8.9A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 820mW (Ta) | N-Channel | - | 60V | 8.9A (Ta) | 16 mOhm @ 10A, 10V | 3V @ 250µA | 17nC @ 10V | 864pF @ 30V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,629
有现货
|
Nexperia USA Inc. | MOSFET N-CH 40V 42A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 40V | 42A (Tc) | 16 mOhm @ 10A, 10V | 2.8V @ 1mA | 22nC @ 10V | 1170pF @ 25V | 10V | ±16V |