- 零件状态 :
- FET型 :
- FET特性 :
- Vgs(th)(最大)@Id :
- 驱动电压(最大Rds接通,最小Rds接通) :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
2,769
有现货
|
ON Semiconductor | MOSFET N-CH 30V 11A SO8FL | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 890mW (Ta), 55.6W (Tc) | N-Channel | - | 30V | 11A (Ta), 90A (Tc) | 4 mOhm @ 30A, 10V | 2.5V @ 250µA | 28nC @ 4.5V | 2677pF @ 12V | 4.5V, 11.5V | ±20V | ||
|
|
获得报价 |
640
有现货
|
ON Semiconductor | MOSFET N-CH 30V 11A SO8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 770mW (Ta), 30.5W (Tc) | N-Channel | - | 30V | 11A (Ta), 69A (Tc) | 4 mOhm @ 30A, 10V | 2.1V @ 250µA | 26nC @ 10V | 1683pF @ 15V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
3,433
有现货
|
Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 37W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 18A (Ta), 40A (Tc) | 4 mOhm @ 30A, 10V | 2V @ 250µA | 11nC @ 4.5V | 1463pF @ 15V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
3,942
有现货
|
Vishay Siliconix | MOSFET P-CH 40V 120A TO-263 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | 375W (Tc) | P-Channel | - | 40V | 120A (Tc) | 4 mOhm @ 30A, 10V | 2.5V @ 250µA | 330nC @ 10V | 13980pF @ 20V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
1,984
有现货
|
ON Semiconductor | MOSFET N-CH 30V 10.2A SO8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 920mW (Ta), 43W (Tc) | N-Channel | - | 30V | 10.2A (Ta), 70A (Tc) | 4 mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | 2516pF @ 15V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
3,366
有现货
|
Infineon Technologies | MOSFET N-CH 30V 90A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 79W (Tc) | N-Channel | - | 30V | 90A (Tc) | 4 mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
2,503
有现货
|
ON Semiconductor | MOSFET N-CH 30V 14.5A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.43W (Ta), 107W (Tc) | N-Channel | - | 30V | 14.5A (Ta), 124A (Tc) | 4 mOhm @ 30A, 10V | 2.5V @ 250µA | 40nC @ 4.5V | 4490pF @ 12V | 4.5V, 11.5V | ±20V | ||
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获得报价 |
2,028
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 80V 60A SOP ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 78W (Tc) | N-Channel | - | 80V | 60A (Tc) | 4 mOhm @ 30A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V |