- 零件状态 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- 驱动电压(最大Rds接通,最小Rds接通) :
- Vgs(最大值) :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
2,214
有现货
|
NXP USA Inc. | MOSFET N-CH 30V 61A LFPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 46W (Tc) | N-Channel | - | 30V | 61A (Tc) | 8 mOhm @ 15A, 10V | 2.15V @ 1mA | 17.8nC @ 10V | 1006pF @ 12V | 4.5V, 10V | ±20V | ||
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获得报价 |
969
有现货
|
Infineon Technologies | MOSFET N-CH 25V 30A DPAK | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 46W (Tc) | N-Channel | - | 25V | 30A (Tc) | 12.8 mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | 4.5V, 10V | ±20V | ||
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获得报价 |
2,126
有现货
|
Infineon Technologies | MOSFET N-CH 650V 10A VSON-4 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 46W (Tc) | N-Channel | - | 650V | 10A (Tc) | 365 mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | 555pF @ 400V | 10V | ±20V | ||
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获得报价 |
1,644
有现货
|
Infineon Technologies | MOSFET N-CH 25V 30A DPAK | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-TO252-3 | 46W (Tc) | N-Channel | - | 25V | 30A (Tc) | 12.8 mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | 4.5V, 10V | ±20V | ||
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获得报价 |
2,915
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 38A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 46W (Tc) | N-Channel | - | 60V | 38A (Tc) | 17 mOhm @ 20A, 10V | 2.5V @ 250µA | 28.5nC @ 10V | 900pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
3,642
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 15A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 46W (Tc) | N-Channel | - | 40V | 15A (Ta) | 17.8 mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10nC @ 10V | 610pF @ 10V | 4.5V, 10V | ±20V | ||
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获得报价 |
1,241
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 20A TO252 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | 46W (Tc) | P-Channel | - | 60V | 20A (Tc) | 55 mOhm @ 19A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1490pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
1,716
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 60V 50A 5DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 46W (Tc) | N-Channel | - | 60V | 50A (Tc) | 9.2 mOhm @ 25A, 10V | 2V @ 35µA | 9.5nC @ 10V | 880pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
1,331
有现货
|
Infineon Technologies | MOSFET N-CH 40V 50A TO252-3-313 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 46W (Tc) | N-Channel | - | 40V | 50A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 17µA | 22.4nC @ 10V | 1780pF @ 6V | 10V | ±20V | ||
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获得报价 |
1,923
有现货
|
Infineon Technologies | MOSFET N-CH 40V 50A TO252-3-313 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 46W (Tc) | N-Channel | - | 40V | 50A (Tc) | 7.3 mOhm @ 50A, 10V | 2.2V @ 17µA | 30nC @ 10V | 2340pF @ 25V | 4.5V, 10V | +20V, -16V |