- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
3 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,906
有现货
|
Rohm Semiconductor | MOSFET N-CH 190V 10A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | 190V | 10A (Tc) | 182 mOhm @ 5A, 10V | 2.5V @ 1mA | 52nC @ 10V | 2000pF @ 25V | 4V, 10V | ±20V | ||
|
|
获得报价 |
1,747
有现货
|
Rohm Semiconductor | MOSFET N-CH 190V 7.5A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | 190V | 7.5A (Tc) | 336 mOhm @ 3.8A, 10V | 2.5V @ 1mA | 30nC @ 10V | 1100pF @ 25V | 4V, 10V | ±30V | ||
|
|
获得报价 |
941
有现货
|
Rohm Semiconductor | MOSFET N-CH 100V 20A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | 100V | 20A (Tc) | 46 mOhm @ 20A, 10V | 2.5V @ 1mA | 55nC @ 10V | 2100pF @ 25V | 4V, 10V | ±20V |