- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
629
有现货
|
Infineon Technologies | MOSFET N-CH 600V 1.8A TO-252 | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 25W (Tc) | N-Channel | - | 600V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5nC @ 10V | 240pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,070
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 2A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 52.1W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4 Ohm @ 1A, 10V | 5V @ 250µA | 9.5nC @ 10V | 362pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,396
有现货
|
STMicroelectronics | MOSFET N-CH 600V 3.3A DPAK | MDmesh™ II | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 50W (Tc) | N-Channel | - | 600V | 3.3A (Tc) | 1.8 Ohm @ 1.65A, 10V | 4V @ 250µA | 9.5nC @ 10V | 188pF @ 50V | 10V | ±25V | |||
|
获得报价 |
1,392
有现货
|
STMicroelectronics | MOSFET N-CH 600V 1.2A DPAK | SuperMESH3™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 27W (Tc) | N-Channel | - | 600V | 1.2A (Tc) | 8 Ohm @ 600mA, 10V | 4.5V @ 50µA | 9.5nC @ 10V | 140pF @ 50V | 10V | ±30V |