- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
3,841
有现货
|
STMicroelectronics | MOSFET N-CH 525V 6.2A DPAK | SuperMESH3™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 90W (Tc) | N-Channel | - | 525V | 6A (Tc) | 980 mOhm @ 3.1A, 10V | 4.5V @ 50µA | 34nC @ 10V | 737pF @ 100V | 10V | ±30V | |||
|
获得报价 |
1,034
有现货
|
STMicroelectronics | MOSFET N-CH 650V 6A DPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 70W (Tc) | N-Channel | - | 650V | 6A (Tc) | 1.3 Ohm @ 2.7A, 10V | 4.5V @ 50µA | 34nC @ 10V | 895pF @ 100V | 10V | ±30V | |||
|
获得报价 |
2,881
有现货
|
Vishay Siliconix | MOSFET N-CH 620V 6A TO252AA | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 78W (Tc) | N-Channel | - | 620V | 6A (Tc) | 900 mOhm @ 3A, 10V | 4V @ 250µA | 34nC @ 10V | 578pF @ 100V | 10V | ±30V | |||
|
获得报价 |
2,445
有现货
|
Vishay Siliconix | MOSFET N-CH 620V 6A TO-252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 78W (Tc) | N-Channel | - | - | 6A (Tc) | 900 mOhm @ 3A, 10V | 4V @ 250µA | 34nC @ 10V | 578pF @ 100V | 10V | ±30V | |||
|
获得报价 |
1,244
有现货
|
Infineon Technologies | MOSFET N-CH 500V 6A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 119W (Tc) | N-Channel | - | 500V | 6A (Tc) | 1.3 Ohm @ 3.7A, 10V | 5V @ 250µA | 34nC @ 10V | 1346pF @ 25V | 10V | ±20V |