- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,110
有现货
|
Infineon Technologies | MOSFET N-CH 800V 4A TO-252 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2.5A, 10V | 3.9V @ 240µA | 26nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
获得报价 |
720
有现货
|
ON Semiconductor | MOSFET N-CH 800V 4A TO252 | SuperFET® II | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 52W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | 880pF @ 100V | 10V | ±20V | |||
|
获得报价 |
3,254
有现货
|
STMicroelectronics | MOSFET N-CH 250V 4A DPAK | MESH OVERLAY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 50W (Tc) | N-Channel | - | 250V | 4A (Tc) | 1.1 Ohm @ 2A, 10V | 4V @ 250µA | 27nC @ 10V | 355pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,620
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 500V 4A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 500V | 4A (Tc) | 2.7 Ohm @ 1.7A, 10V | 3V @ 250µA | 12nC @ 10V | 453pF @ 50V | 10V | ±20V | |||
|
获得报价 |
1,024
有现货
|
Infineon Technologies | MOSFET N-CH 800V 4A 3TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | 570pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,025
有现货
|
Rohm Semiconductor | MOSFET N-CH 600V 4A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 20W (Tc) | N-Channel | - | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | 250pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,026
有现货
|
Infineon Technologies | MOSFET N-CH 800V 4A DPAK | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 32W (Tc) | N-Channel | Super Junction | 800V | 4A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | 250pF @ 500V | 10V | ±20V |